D5050UKG4 datasheet, PDF - EEWORLD Datasheet

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D5050UKG4: DescriptionUHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DMX, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size29KB，2 Pages; ManufacturerSEMELAB; Environmental Compliance

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D5050UKG4 Overview

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DMX, 4 PIN

D5050UKG4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	125 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
JESD-609 code	e4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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TetraFET

D5050UK

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

A

B

C

1

2

D

E

4

M

3

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

300W – 50V – 30MHz

SINGLE ENDED

FEATURES

• SIMPLIFIED AMPLIFIER DESIGN

F

G

H

K

I

J

• SUITABLE FOR BROAD BAND APPLICATIONS

• LOW C

rss

DMX

PIN 1

PIN 3

SOURCE

PIN 2

PIN 4

DRAIN

GATE

• SIMPLE BIAS CIRCUITS

• LOW NOISE

DIM

mm

A

28.83

B

21.97

C

45°

D

6.86

E

3.43 Dia.

F

5.84

G 13.97 Dia.

H

6.60

I

0.13

J

3.81

K

2.54

M

27.94

Tol.

0.13

5°

0.13

REF

0.02

0.25

0.13

0.51

Inches

1.135

0.865

45°

0.27

0.135 Dia.

0.230

0.550 Dia.

0.260

0.005

0.15

0.100

1.10

Tol.

0.005

5°

0.005

REF

0.001

0.01

0.005

0.02

• HIGH GAIN – 20 dB MINIMUM

APPLICATIONS

•

HF/VHF/UHF COMMUNICATIONS

from 1 MHz to 175 MHz

ABSOLUTE MAXIMUM RATINGS

(T

case

= 25°C unless otherwise stated)

P

D

BV

DSS

BV

GSS

I

D(sat)

T

stg

T

j

Power Dissipation

Drain – Source Breakdown Voltage

Gate – Source Breakdown Voltage

Drain Current

Storage Temperature

Maximum Operating Junction Temperature

500W

125V

±20V

36A

–65 to 150°C

200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Document Number 6071

Issue 1

D5050UKG4 Related Products

	D5050UKG4
Description	UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC, DMX, 4 PIN
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
package instruction	FLANGE MOUNT, O-CRFM-F4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	125 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	O-CRFM-F4
JESD-609 code	e4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	RADIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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