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2N6322

Description
30A, 200V, NPN, Si, POWER TRANSISTOR, TO-3
CategoryDiscrete semiconductor    The transistor   
File Size43KB,1 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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2N6322 Overview

30A, 200V, NPN, Si, POWER TRANSISTOR, TO-3

2N6322 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionFLANGE MOUNT, O-MBFM-P2
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)30 A
Collector-emitter maximum voltage200 V
ConfigurationSINGLE
Minimum DC current gain (hFE)6
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)200 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)10 MHz
Base Number Matches1

2N6322 Related Products

2N6322 2N6324 2N6272 2N6271 2N6325 2N4003
Description 30A, 200V, NPN, Si, POWER TRANSISTOR, TO-3 30A, 200V, NPN, Si, POWER TRANSISTOR, TO-63 30A, 80V, NPN, Si, POWER TRANSISTOR, TO-63 30A, 100V, NPN, Si, POWER TRANSISTOR, TO-3 30A, 300V, NPN, Si, POWER TRANSISTOR, TO-63 30A, 100V, NPN, Si, POWER TRANSISTOR, TO-63
package instruction FLANGE MOUNT, O-MBFM-P2 POST/STUD MOUNT, O-MUPM-D3 POST/STUD MOUNT, O-MUPM-D3 FLANGE MOUNT, O-MBFM-P2 POST/STUD MOUNT, O-MUPM-D3 POST/STUD MOUNT, O-MUPM-D3
Reach Compliance Code _compli unknow unknow _compli unknow unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 30 A 30 A 30 A 30 A 30 A 30 A
Collector-emitter maximum voltage 200 V 200 V 80 V 100 V 300 V 100 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 6 6 10 10 6 10
JEDEC-95 code TO-3 TO-63 TO-63 TO-3 TO-63 TO-63
JESD-30 code O-MBFM-P2 O-MUPM-D3 O-MUPM-D3 O-MBFM-P2 O-MUPM-D3 O-MUPM-D3
Number of components 1 1 1 1 1 1
Number of terminals 2 3 3 2 3 3
Maximum operating temperature 200 °C 200 °C 200 °C 200 °C 200 °C 175 °C
Package body material METAL METAL METAL METAL METAL METAL
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form FLANGE MOUNT POST/STUD MOUNT POST/STUD MOUNT FLANGE MOUNT POST/STUD MOUNT POST/STUD MOUNT
Polarity/channel type NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 200 W 200 W 150 W 150 W 200 W 100 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO
Terminal form PIN/PEG SOLDER LUG SOLDER LUG PIN/PEG SOLDER LUG SOLDER LUG
Terminal location BOTTOM UPPER UPPER BOTTOM UPPER UPPER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 10 MHz 10 MHz 75 MHz 75 MHz 10 MHz 30 MHz
Base Number Matches 1 1 1 1 1 1

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