30A, 200V, NPN, Si, POWER TRANSISTOR, TO-3
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
package instruction | FLANGE MOUNT, O-MBFM-P2 |
Reach Compliance Code | _compli |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 30 A |
Collector-emitter maximum voltage | 200 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 6 |
JEDEC-95 code | TO-3 |
JESD-30 code | O-MBFM-P2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 200 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | PIN/PEG |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 10 MHz |
Base Number Matches | 1 |
2N6322 | 2N6324 | 2N6272 | 2N6271 | 2N6325 | 2N4003 | |
---|---|---|---|---|---|---|
Description | 30A, 200V, NPN, Si, POWER TRANSISTOR, TO-3 | 30A, 200V, NPN, Si, POWER TRANSISTOR, TO-63 | 30A, 80V, NPN, Si, POWER TRANSISTOR, TO-63 | 30A, 100V, NPN, Si, POWER TRANSISTOR, TO-3 | 30A, 300V, NPN, Si, POWER TRANSISTOR, TO-63 | 30A, 100V, NPN, Si, POWER TRANSISTOR, TO-63 |
package instruction | FLANGE MOUNT, O-MBFM-P2 | POST/STUD MOUNT, O-MUPM-D3 | POST/STUD MOUNT, O-MUPM-D3 | FLANGE MOUNT, O-MBFM-P2 | POST/STUD MOUNT, O-MUPM-D3 | POST/STUD MOUNT, O-MUPM-D3 |
Reach Compliance Code | _compli | unknow | unknow | _compli | unknow | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Shell connection | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR | COLLECTOR |
Maximum collector current (IC) | 30 A | 30 A | 30 A | 30 A | 30 A | 30 A |
Collector-emitter maximum voltage | 200 V | 200 V | 80 V | 100 V | 300 V | 100 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum DC current gain (hFE) | 6 | 6 | 10 | 10 | 6 | 10 |
JEDEC-95 code | TO-3 | TO-63 | TO-63 | TO-3 | TO-63 | TO-63 |
JESD-30 code | O-MBFM-P2 | O-MUPM-D3 | O-MUPM-D3 | O-MBFM-P2 | O-MUPM-D3 | O-MUPM-D3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 3 | 3 | 2 | 3 | 3 |
Maximum operating temperature | 200 °C | 200 °C | 200 °C | 200 °C | 200 °C | 175 °C |
Package body material | METAL | METAL | METAL | METAL | METAL | METAL |
Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
Package form | FLANGE MOUNT | POST/STUD MOUNT | POST/STUD MOUNT | FLANGE MOUNT | POST/STUD MOUNT | POST/STUD MOUNT |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 200 W | 200 W | 150 W | 150 W | 200 W | 100 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO |
Terminal form | PIN/PEG | SOLDER LUG | SOLDER LUG | PIN/PEG | SOLDER LUG | SOLDER LUG |
Terminal location | BOTTOM | UPPER | UPPER | BOTTOM | UPPER | UPPER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 10 MHz | 10 MHz | 75 MHz | 75 MHz | 10 MHz | 30 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 |