2N7286R3 datasheet, PDF - EEWORLD Datasheet

2N7286R3: Description12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA; CategoryDiscrete semiconductor The transistor; File Size114KB，5 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/

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2N7286R3 Overview

12A, 200V, 0.255ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA

Parameter Name	Attribute value
package instruction	FLANGE MOUNT, R-MSFM-P3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	RADIATION HARDENED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.255 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-257AA
JESD-30 code	R-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON
Base Number Matches	1

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