64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Parameter Name | Attribute value |
Maker | Texas Instruments |
package instruction | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 500 mJ |
Shell connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V |
Maximum drain current (ID) | 64 A |
Maximum drain-source on-resistance | 0.016 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB |
JESD-30 code | R-PSSO-G2 |
Number of components | 1 |
Number of terminals | 2 |
Operating mode | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 130 W |
Maximum pulsed drain current (IDM) | 190 A |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | SINGLE |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Maximum off time (toff) | 230 ns |
Maximum opening time (tons) | 230 ns |
NDB7061/L86Z | NDB7061/L99Z | NDB7061 | NDP7061/J69Z | NDB7061/S62Z | |
---|---|---|---|---|---|
Description | 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN | 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB |
Maker | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments | Texas Instruments |
package instruction | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | FLANGE MOUNT, R-PSFM-T3 | SMALL OUTLINE, R-PSSO-G2 |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Avalanche Energy Efficiency Rating (Eas) | 500 mJ | 500 mJ | 500 mJ | 500 mJ | 500 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V | 60 V | 60 V |
Maximum drain current (ID) | 64 A | 64 A | 64 A | 64 A | 64 A |
Maximum drain-source on-resistance | 0.016 Ω | 0.016 Ω | 0.016 Ω | 0.016 Ω | 0.016 Ω |
FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 code | TO-263AB | TO-263AB | TO-263AB | TO-220AB | TO-263AB |
JESD-30 code | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSFM-T3 | R-PSSO-G2 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 3 | 2 |
Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | FLANGE MOUNT | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power consumption environment | 130 W | 130 W | 130 W | 130 W | 130 W |
Maximum pulsed drain current (IDM) | 190 A | 190 A | 190 A | 190 A | 190 A |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | YES | YES | NO | YES |
Terminal form | GULL WING | GULL WING | GULL WING | THROUGH-HOLE | GULL WING |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
transistor applications | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Maximum off time (toff) | 230 ns | 230 ns | 230 ns | 230 ns | 230 ns |
Maximum opening time (tons) | 230 ns | 230 ns | 230 ns | 230 ns | 230 ns |
Shell connection | DRAIN | DRAIN | DRAIN | - | DRAIN |