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NDB7061/L86Z

Description
64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
CategoryDiscrete semiconductor    The transistor   
File Size159KB,6 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NDB7061/L86Z Overview

64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB

NDB7061/L86Z Parametric

Parameter NameAttribute value
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)64 A
Maximum drain-source on-resistance0.016 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment130 W
Maximum pulsed drain current (IDM)190 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)230 ns
Maximum opening time (tons)230 ns

NDB7061/L86Z Related Products

NDB7061/L86Z NDB7061/L99Z NDB7061 NDP7061/J69Z NDB7061/S62Z
Description 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN 64A, 60V, 0.016ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
Maker Texas Instruments Texas Instruments Texas Instruments Texas Instruments Texas Instruments
package instruction SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 SMALL OUTLINE, R-PSSO-G2 FLANGE MOUNT, R-PSFM-T3 SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V 60 V 60 V 60 V 60 V
Maximum drain current (ID) 64 A 64 A 64 A 64 A 64 A
Maximum drain-source on-resistance 0.016 Ω 0.016 Ω 0.016 Ω 0.016 Ω 0.016 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-263AB TO-263AB TO-263AB TO-220AB TO-263AB
JESD-30 code R-PSSO-G2 R-PSSO-G2 R-PSSO-G2 R-PSFM-T3 R-PSSO-G2
Number of components 1 1 1 1 1
Number of terminals 2 2 2 3 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C 175 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE FLANGE MOUNT SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 130 W 130 W 130 W 130 W 130 W
Maximum pulsed drain current (IDM) 190 A 190 A 190 A 190 A 190 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES NO YES
Terminal form GULL WING GULL WING GULL WING THROUGH-HOLE GULL WING
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON
Maximum off time (toff) 230 ns 230 ns 230 ns 230 ns 230 ns
Maximum opening time (tons) 230 ns 230 ns 230 ns 230 ns 230 ns
Shell connection DRAIN DRAIN DRAIN - DRAIN
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