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NESG2101M16-T3YFB-A

Description
RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size128KB,13 Pages
ManufacturerNEC Electronics
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NESG2101M16-T3YFB-A Overview

RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN

NESG2101M16-T3YFB-A Parametric

Parameter NameAttribute value
MakerNEC Electronics
package instructionLEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Codeunknown
Other featuresLOW NOISE
Maximum collector current (IC)0.1 A
Collector-based maximum capacity0.5 pF
Collector-emitter maximum voltage5 V
ConfigurationSINGLE
highest frequency bandL BAND
JESD-30 codeR-PDSO-F6
Number of components1
Number of terminals6
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON GERMANIUM
Nominal transition frequency (fT)17000 MHz

NESG2101M16-T3YFB-A Related Products

NESG2101M16-T3YFB-A NESG2101M16-A-YFB NESG2101M16-T3FB-A NESG2101M16-T3-A NESG2101M16-A NESG2101M16-A-FB
Description RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN RF Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, L Band, Silicon Germanium, NPN, LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
package instruction LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN LEAD FREE, LEADLESS MINIMOLD, M16, 1208, 6 PIN
Reach Compliance Code unknown unknown unknown unknown unknown unknown
Other features LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Collector-based maximum capacity 0.5 pF 0.5 pF 0.5 pF 0.5 pF 0.5 pF 0.5 pF
Collector-emitter maximum voltage 5 V 5 V 5 V 5 V 5 V 5 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
highest frequency band L BAND L BAND L BAND L BAND L BAND L BAND
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
Number of components 1 1 1 1 1 1
Number of terminals 6 6 6 6 6 6
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM SILICON GERMANIUM
Nominal transition frequency (fT) 17000 MHz 17000 MHz 17000 MHz 17000 MHz 17000 MHz 17000 MHz
Maker NEC Electronics - NEC Electronics NEC Electronics NEC Electronics NEC Electronics

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