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MRF422MP

Description
RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4
CategoryDiscrete semiconductor    The transistor   
File Size17KB,1 Pages
ManufacturerAdvanced Semiconductor, Inc.
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MRF422MP Overview

RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4

MRF422MP Parametric

Parameter NameAttribute value
MakerAdvanced Semiconductor, Inc.
package instructionFLANGE MOUNT, O-CRFM-F4
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)20 A
Collector-emitter maximum voltage35 V
ConfigurationSingle
Minimum DC current gain (hFE)10
highest frequency bandHIGH FREQUENCY BAND
JESD-30 codeO-CRFM-F4
Number of terminals4
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)290 W
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationRADIAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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