RF Power Bipolar Transistor, High Frequency Band, Silicon, NPN, 0.500 INCH, FM-4
Parameter Name | Attribute value |
Maker | Advanced Semiconductor, Inc. |
package instruction | FLANGE MOUNT, O-CRFM-F4 |
Contacts | 4 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Maximum collector current (IC) | 20 A |
Collector-emitter maximum voltage | 35 V |
Configuration | Single |
Minimum DC current gain (hFE) | 10 |
highest frequency band | HIGH FREQUENCY BAND |
JESD-30 code | O-CRFM-F4 |
Number of terminals | 4 |
Maximum operating temperature | 150 °C |
Package body material | CERAMIC, METAL-SEALED COFIRED |
Package shape | ROUND |
Package form | FLANGE MOUNT |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 290 W |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | FLAT |
Terminal location | RADIAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |