MMBT3904T/R13 datasheet, PDF - EEWORLD Datasheet

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MMBT3904T/R13: DescriptionSmall Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3; CategoryDiscrete semiconductor The transistor; ManufacturerPANJIT; Websitehttp://www.panjit.com.tw/; Environmental Compliance; PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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MMBT3904T/R13 Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

MMBT3904T/R13 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	PANJIT
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.225 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	300 MHz
Maximum off time (toff)	250 ns
Maximum opening time (tons)	70 ns

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MMBT3904

NPN GENERAL PURPOSE SWITCHING TRANSISTOR

VOLTAGE

FEATURES

• NPN epitaxial silicon, planar design

• Collector-emitter voltage VCE = 40V

• Collector current IC = 200mA

• Transition frequency f

>300MHz @ I

=10mAdc,

=20Vdc,f=100MHz

•

0.056(1.40)

0.047(1.20)

0.120(3.04)

0.110(2.80)

40 Volts

POWER

225 mWatts

SOT-23

Unit

：

inch(mm)

0.006(0.15)MIN.

0.103(2.60)

0.044(1.10)

0.035(0.90)

0.020(0.50)

0.013(0.35)

MECHANICAL DATA

Case: SOT-23, Plastic

Terminals: Solderable per MIL-STD-750, Method 2026

Approx. Weight:

Marking: S1A

0.008 gram

Top View

Collector

Base

Emitter

Collector

0.079(2.00)

0.070(1.80)

0.008(0.20)

0.003(0.08)

0.004(0.10)MAX.

ABSOLUTE RATINGS

PARAMETER

Collector - Emitter Voltage

Collector - Base Voltage

Emitter - Base Voltage

Collector Current - Continuous

Symbol

CEO

CBO

EBO

Value

6.0

200

Units

THERMAL CHARACTERISTICS

PARAMETER

Max Power Dissipation (Note 1)

Thermal Resistance , Junction to Ambient

Junction Temperature

Storage Temperature

Symbol

TOT

Rθ

STG

Value

225

556

-55 to 150

Units

C/W

Note 1: Transistor mounted on FR-5 board 1.0 x 0.75 x 0.062 in.

REV.0.1-OCT.21.2008

0.086(2.20)

PAGE . 1

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