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MXLSMCGLCE51ATR

Description
Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC, SMCG, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size317KB,4 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

MXLSMCGLCE51ATR Overview

Trans Voltage Suppressor Diode, 1500W, 51V V(RWM), Unidirectional, 1 Element, Silicon, DO-215AB, PLASTIC, SMCG, 2 PIN

MXLSMCGLCE51ATR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
Parts packaging codeDO-215AB
package instructionPLASTIC, SMCG, 2 PIN
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum breakdown voltage62.7 V
Minimum breakdown voltage56.7 V
Breakdown voltage nominal value59.7 V
Maximum clamping voltage82.4 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-215AB
JESD-30 codeR-PDSO-G2
JESD-609 codee0
Maximum non-repetitive peak reverse power dissipation1500 W
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage51 V
surface mountYES
technologyAVALANCHE
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Website: http://www.microsemi.com
6 Lake Street, Lawrence, MA 01841
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
SURFACE MOUNT
1500 Watt Low Capacitance
Transient Voltage Suppressor
DEVICES
- High Reliability controlled devices
- Unidirectional (A) construction
- Available in both J-bend and Gull-wing terminations
- Selections for 6.5 to 170 V standoff voltages (V
WM
)
LEVELS
M, MA, MX, MXL
MSMCJLCE6.5A thru MSMCJLCE170A, e3
and MSMCGLCE6.5A thru MSMCGLCE170A, e3
FEATURES
High reliability controlled devices with fabrication and assembly lot traceability
100% surge tested devices
Low capacitance of 100 pF or less
Optional upscreening available by replacing the M prefix with MA, MX or MXL. These prefixes
specify various screening and conformance inspection options based on MIL-PRF-19500. Refer
to
MicroNote 129
for more details on the screening options.
Axial-lead equivalent packages for thru-hole mounting available as MLCE6.5A to MLCE170CA
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
1500 Watts of Peak Pulse Power at 10/1000
s
Low capacitance for data line protection to 1 MHz
Protection for aircraft fast data rate lines up to Level 5 Waveform 4 and Level 2 Waveform 5A in
RTCA/DO-160D (also see MicroNote 130) & ARINC 429 with bit rates of 100 kb/s (per ARINC
429, Part 1, par 2.4.1.1)
IEC 61000-4-2 ESD 15 kV (air), 8 kV (contact)
IEC 61000-4-5 (lightning) as further detailed in MLCE6.5 thru MLCE170A data sheet
T1/E1 Line Cards
Base Stations, WAN & XDSL Interfaces
CSU/DSU Equipment
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 ºC: 1500 watts at 10/1000 μs (also see Figures 1,2, and 3)
with impulse repetition rate (duty factor) of 0.01 % or less
Clamping Factor: 1.40 @ Full Rated power:
1.30 @ 50 % Rated power
-9
t
clamping
(0 V to V
BR
min): Less than 5x10 seconds
Operating and Storage temperatures: -65 ºC to +150 ºC
Steady State power dissipation: 5.0W @ TL = 50 ºC
Thermal Resistance: 20 ºC /W (typical junction to lead (tab) at mounting plane
When pulse testing, do not pulse in opposite direction. (See “Schematic Applications” section
herein and Figures 5 & 6 for further protection in both directions)
Solder temperatures: 260 ºC for 10 s (maximum)
RF01002 Rev A, June 2010
High Reliability Product Group
Page 1 of 4

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