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2SD1133C

Description
Power Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size29KB,5 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

2SD1133C Overview

Power Bipolar Transistor, 4A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220AB, 3 PIN

2SD1133C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)4 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power dissipation(Abs)40 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)7 MHz
Base Number Matches1
2SD1133, 2SD1134
Silicon NPN Triple Diffused
ADE-208-905 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
TO-220AB
1
2 3
1. Base
2. Collector
(Flange)
3. Emitter
Absolute Maximum Ratings
(Ta = 25°C)
Ratings
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note:
1. Value at T
C
= 25°C.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(peak)
P
C
*
1
Tj
Tstg
2SD1133
70
50
5
4
8
40
150
–45 to +150
2SD1134
70
60
5
4
8
40
150
–45 to +150
Unit
V
V
V
A
A
W
°C
°C
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