2SK2059(L), 2SK2059(S)
Silicon N-Channel MOS FET
ADE-208-1341 (Z)
1st. Edition
Mar. 2001
Application
High speed power switching
Features
•
Low on-resistance
•
High speed switching
•
No Secondary Breakdown
•
Suitable for Switching regulator, DC - DC converter
Outline
DPAK-1
4
4
1
1
D
G
1. Gate
2. Drain
3. Source
4. Drain
S
2
3
2 3
2SK2059(L), 2SK2059(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Notes 1. PW
≤
10
µs,
duty cycle
≤
1 %
2. Value at Tc = 25°C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
1
I
DR
Pch*
2
Tch
Tstg
Ratings
600
±30
3
6
3
20
150
–55 to +150
Unit
V
V
A
A
A
W
°C
°C
2
2SK2059(L), 2SK2059(S)
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Symbol
V
(BR)DSS
V
(BR)GSS
I
GSS
Min
600
±30
—
—
2.0
—
1.2
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
3.8
2.0
295
70
12
8
25
65
30
0.9
220
Max
—
—
±10
100
3.0
5.0
—
—
—
—
—
—
—
—
—
—
Unit
V
V
µA
µA
V
Ω
S
pF
pF
pF
ns
ns
ns
ns
V
ns
I
F
=3 A, V
GS
= 0
I
F
= 3A, V
GS
= 0,
di
F
/ dt = 100 A /
µs
Test conditions
I
D
= 10 mA, V
GS
= 0
I
G
=
±100 µA,
V
DS
= 0
V
GS
=
±25
V, V
DS
= 0
V
DS
=500 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1A
V
GS
= 10 V*
1
I
D
= 1A
V
DS
= 10 V*
1
V
DS
= 10 V
V
GS
= 0
f = 1 MHz
I
D
= 1A
V
GS
= 10 V
R
L
= 30Ω
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body to drain diode forward
voltage
Body to drain diode reverse
recovery time
Note
1. Pulse Test
V
GS(off)
R
DS(on)
|y
fs
|
Ciss
Coss
Crss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
3
2SK2059(L), 2SK2059(S)
Power vs. Temperature Derating
40
Pch (W)
Maximum Safe Operation Area
10
3
Drain Current I
D
(A)
30
1
0.3
0.1
0.03
0.01
50
100
150
Tc (°C)
200
1
Case Temperature
3
10
30
100 300 1,000
Drain to Source Voltage V
DS
(V)
Ta = 25°C
10
0
10
ea
O
is per
lim at
ite ion
d in
by th
R is
DS
µ
s
µ
s
ar
PW
=
(o
n)
1
m
10
m
s
D
C
pe
O
s
(1
Channel Dissipation
P
ot
Sh
t
ra
20
io
n
)
se
ul
=
(T
C
25
°C
10
)
0
Typical Output Characteristics
5
Pulse Test
4
Drain Current I
D
(A)
4.5 V
3
10 V
Drain Current I
D
(A)
5V
4
5
Typical Output Characteristics
V
DS
= 20 V
Pulse Test
T
C
= –25°C
25°C
3
75°C
2
4V
1
3.5 V
V
GS
= 3 V
2
1
0
10
30
40
20
50
Drain to Source Voltage V
DS
(V)
0
2
6
8
4
10
Gate to Source Voltage V
GS
(V)
4
2SK2059(L), 2SK2059(S)
Drain to Source Saturation Voltage V
DS (on)
(V)
Drain to Source Saturation Voltage
vs. Gate to Source Voltage
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
20
Pulse Test
16
50
Pulse Test
20
10
5
15 V
2
1
0.5
0.05 0.1
V
GS
= 10 V
Static Drain to Source on State
Resistance vs. Drain Current
12
I
D
= 2 A
8
1A
0.5 A
0
4
12
16
8
20
Gate to Source Voltage V
GS
(V)
4
0.2
0.5
1
2
Drain Current I
D
(A)
5
Static Drain to Source on State
Resistance vs. Temperature
Static Drain to Source on State Resistance
R
DS (on)
(Ω)
V
GS
= 10 V
Pulse Test
8
0.5 A
6
I
D
= 2 A
Forward Transfer Admittance
yfs
(S)
10
1A
5
Forward Transfer Admittance
vs. Drain Current
V
DS
= 20 V
Pulse Test
2
1
0.5
4
T
C
= 25°C
25°C
75°C
0.2
0.1
0.05
0.05 0.1
2
0
–40
0
80
120
40
Case Temperature T
C
(°C)
160
0.2
0.5
1
2
Drain Current I
D
(A)
5
5
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