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2SD0946S

Description
Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size77KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SD0946S Overview

Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN

2SD0946S Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Parts packaging codeSIP
package instructionROHS COMPLIANT, TO-126B-A1, 3 PIN
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage25 V
ConfigurationDARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)16000
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.2 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
Base Number Matches1

2SD0946S Related Products

2SD0946S 2SD0946BS 2SD0946AQ 2SD0946BQ 2SD0946BR 2SD0946Q 2SD0946AS 2SD0946R
Description Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to
Parts packaging code SIP SIP SIP SIP SIP SIP SIP SIP
package instruction ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN ROHS COMPLIANT, TO-126B-A1, 3 PIN
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknow unknow unknow unknow unknow unknow unknow unknow
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 1 A 1 A 1 A 1 A 1 A 1 A 1 A 1 A
Collector-emitter maximum voltage 25 V 80 V 50 V 80 V 80 V 25 V 50 V 25 V
Configuration DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR DARLINGTON WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 16000 16000 4000 4000 8000 4000 16000 8000
JEDEC-95 code TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN NPN
Maximum power dissipation(Abs) 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W 1.2 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz 150 MHz
Base Number Matches 1 1 1 1 1 1 1 1

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