Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Parts packaging code | SIP |
package instruction | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
Contacts | 3 |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 25 V |
Configuration | DARLINGTON WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 16000 |
JEDEC-95 code | TO-126 |
JESD-30 code | R-PSFM-T3 |
Number of components | 1 |
Number of terminals | 3 |
Maximum operating temperature | 150 °C |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 1.2 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | THROUGH-HOLE |
Terminal location | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 150 MHz |
Base Number Matches | 1 |
2SD0946S | 2SD0946BS | 2SD0946AQ | 2SD0946BQ | 2SD0946BR | 2SD0946Q | 2SD0946AS | 2SD0946R | |
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Description | Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN | Power Bipolar Transistor, 1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to | conform to | conform to | conform to |
Parts packaging code | SIP | SIP | SIP | SIP | SIP | SIP | SIP | SIP |
package instruction | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN | ROHS COMPLIANT, TO-126B-A1, 3 PIN |
Contacts | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Reach Compliance Code | unknow | unknow | unknow | unknow | unknow | unknow | unknow | unknow |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Maximum collector current (IC) | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A | 1 A |
Collector-emitter maximum voltage | 25 V | 80 V | 50 V | 80 V | 80 V | 25 V | 50 V | 25 V |
Configuration | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR | DARLINGTON WITH BUILT-IN RESISTOR |
Minimum DC current gain (hFE) | 16000 | 16000 | 4000 | 4000 | 8000 | 4000 | 16000 | 8000 |
JEDEC-95 code | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 | TO-126 |
JESD-30 code | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 | R-PSFM-T3 |
Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 | 3 | 3 | 3 |
Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT | FLANGE MOUNT |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Polarity/channel type | NPN | NPN | NPN | NPN | NPN | NPN | NPN | NPN |
Maximum power dissipation(Abs) | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W | 1.2 W |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
Terminal location | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
Nominal transition frequency (fT) | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz | 150 MHz |
Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |