GM71C4403ELR-80 datasheet, PDF

GM71C4403ELR-80: DescriptionEDO DRAM, 1MX4, 80ns, CMOS, PDSO20,; Categorystorage storage; File Size401KB，10 Pages; ManufacturerLG Semicon Co., Ltd.

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GM71C4403ELR-80 Overview

EDO DRAM, 1MX4, 80ns, CMOS, PDSO20,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LG Semicon Co., Ltd.
Reach Compliance Code	unknown
access mode	FAST PAGE WITH EDO
Maximum access time	80 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH; BATTERY BACKUP OPERATION
I/O type	COMMON
JESD-30 code	R-PDSO-G20
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	EDO DRAM
memory width	4
Number of functions	1
Number of ports	1
Number of terminals	20
word count	1048576 words
character code	1000000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1MX4
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSSOP
Encapsulate equivalent code	TSSOP20/26,.36
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
reverse pinout	YES
self refresh	NO
Maximum standby current	0.0002 A
Maximum slew rate	0.065 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.635 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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