EDO DRAM, 1MX4, 60ns, CMOS, PDSO20,
Parameter Name | Attribute value |
Is it Rohs certified? | incompatible |
Maker | LG Semicon Co., Ltd. |
Reach Compliance Code | unknown |
Maximum access time | 60 ns |
I/O type | COMMON |
JESD-30 code | R-PDSO-J20 |
JESD-609 code | e0 |
memory density | 4194304 bit |
Memory IC Type | EDO DRAM |
memory width | 4 |
Number of terminals | 20 |
word count | 1048576 words |
character code | 1000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX4 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | SOJ |
Encapsulate equivalent code | SOJ20/26,.34 |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
power supply | 5 V |
Certification status | Not Qualified |
refresh cycle | 1024 |
self refresh | NO |
Maximum standby current | 0.001 A |
Maximum slew rate | 0.08 mA |
Nominal supply voltage (Vsup) | 5 V |
surface mount | YES |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal surface | Tin/Lead (Sn/Pb) |
Terminal form | J BEND |
Terminal pitch | 1.27 mm |
Terminal location | DUAL |