1SS400
SURFACE MOUNT FAST SWITCHING DIODE
Features
Extremely fast reverse recovery time to
reduce switching losses
Very low capacitance for reduced insertion losses
Reverse voltage rating of 80V
Also available in lead-free plating
(100% matte tin finish)
SOD-523
Dim
A
B
C
D
H
J
K
Min
1.10
0.70
0.50
0.25
0.16
0.11
1.50
Max
1.30
0.90
0.70
0.35
0.24
0.13
1.70
APPLICATION
Mobile phones and accessories
Hand-held computers
High Speed Switching Applications
PIN 1. CA THODE
2. A NODE
Maximum Ratings
Parameter
@T
A
=25°C unless otherwise specified
Symbol
V
RM
V
R
I
F
I
FSM
P
tot
T
j
T
stg
@T
A
=25°C unless otherwise specified
Limits
90
80
225
0.5
200
150
-55-150
Unit
V
V
mA
A
mW
℃
℃
Peak reverse voltage
DC Reverse voltage
Continuous forward current
Surge current
Total power dissipation
Junction temperature
Storage temperature
Electrical Characteristics
Parameter
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Symbol
V
F
I
R
C
d
t
rr
Min.
Typ.
Max.
1.2
0.1
Unit
V
μ
A
pF
ns
Conditions
I
F
=100mA
V
R
=80V
V
R
=0.5V,f=1MHz
V
R
=6V,I
F
=10mA,R
L
=100Ω
0.72
2.0
4
RATINGS AND CHARACTERISTIC CURVES
820
Ω
1SS400
+10 V
2 .0 k
Ω
100 µH
0 .1 µ F
I
F
0 .1 µ F
DUT
?
5 0
Ω
O u tp u t
P u ls e
G e n e ra to r
5 0
Ω
In p u t
S a m p li n g
O s c il lo s c o p e
Notes: 1. A 2.0k
Ω
variable resistor adjusted for a forward current (I
F
) to 10mA
2. Input pulse is adjusted to I
R(peak)
is equal to 10mA
Figure 1. REVERSE RECOVERY TIME EQUIVALENT TEST CIRCUIT
100
R ev erse L eak ag e Cu r ren t , I
R
(u A )
10.000
T
J
= 150 °C
F o r w ar d Cu r r en t , I
F
(m A )
T
J
= 150 °C
1.000
10
T
J
= 25 °C
T
J
= 75 °C
1
T
J
= -25 °C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Forward Voltage, V
F
(V)
0.100
T
J
= 75 °C
0.010
T
J
= 25 °C
0.001
0
20
40
Reverse Voltage, V
R
(V)
60
80
Fig. 2. Typical Forward Characteristics
Fig. 3. Typical Reverse Characteristics
0.8
0.6
Capaci tan ce (pF)
0.4
0.2
0.0
0
10
20
30
40
50
60
Reverse Voltage, V
R
(V)
Fig. 4. Typical Capacitance
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