FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
FEATURES
•
•
•
•
Low Noise Figure: 0.75dB (Typ.)@f=12GHz (FHX04)
High Associated Gain: 10.5dB (Typ.)@f=12GHz
Lg
≤
0.25µm, Wg = 200µm
Gold Gate Metallization for High Reliability
DESCRIPTION
The FHX04X, FHX05X, FHX06X are High Electron Mobility
Transistors (HEMT) intended for general purpose, low noise and high
gain amplifiers in the 2-18GHz frequency range. The devices are well
suited for telecommunication, DBS, TVRO, VSAT or other low noise
applications.
Fujitsu’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25°C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
*Note:
Mounted on Al2O3 board (30 x 30 x 0.65mm)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Symbol
VDS
VGS
Pt*
Tstg
Tch
Rating
3.5
-3.0
180
-65 to +175
175
Unit
V
V
mW
°C
°C
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Noise Figure
FHX04X
Associated Gain
Noise Figure
FHX05X
Associated Gain
Noise Figure
FHX06X
Associated Gain
Maximum Available Gain
Thermal Resistance
Symbol
IDSS
gm
Vp
VGSO
NF
Gas
NF
Gas
NF
Gas
Ga(max) Same as above,
Gain matched
Rth
Channel to Case
Test Conditions
VDS = 2V, VGS = 0V
VDS = 2V, IDS = 10mA
VDS = 2V, IDS = 1mA
IGS = -10µA
Min.
15
35
-0.2
-3.0
-
9.5
-
9.5
-
9.5
11.0
-
Limit
Typ. Max.
30
60
45
-
-0.7
-1.5
-
-
0.75 0.85
10.5
-
0.9
1.1
10.5
-
1.1
1.35
10.5
12.0
220
-
-
300
Unit
mA
mS
V
V
dB
dB
dB
dB
dB
dB
dB
°C/W
VDS = 2V
IDS = 10mA
f = 12GHz
Note:
RF parameter sample size 10pcs. criteria (accept/reject)=(2/3)
The chip must be enclosed in a hermetically sealed environment for optimum performance and reliability.
Edition 1.2
September 1999
1
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
POWER DERATING CURVE
200
Total Power Dissipation (W)
150
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
40
Drain Current (mA)
30
VGS = 0V
100
20
-0.2V
50
10
-0.4V
-0.6V
-0.8V
3
0
0
50
100
150
200
0
1
2
4
Ambient Temperature (°C)
Drain-Source Voltage (V)
NF & Gas vs. IDS
3
Noise Figure (dB)
f=12GHz
VDS=2V
2
Gas
12
Associated Gain (dB)
11
10
9
1
NF
8
7
0
10
20
Drain Current (mA)
30
Output Power (dBm)
OUTPUT POWER vs. INPUT POWER
f=12GHz
VDS=2V
10
Noise Figure Matched
IDS=10mA
Gain Matched
IDS=15mA
5
0
-10
-5
0
5
Input Power (dBm)
2
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
+j50
+j100
+j25
12
S11
S22
+90°
S21
S12
+j250
+j10
4
2
1
6
8
10
14
22
16
20
18
20
18
22
16
14
810
6
1
0.1 GHZ
0
10
22
25
50Ω
100
201816
SCALE FOR |S12|
-j10
20
18
16
14
12
22
8
141210
4
3
2
5
0.1 GHZ
180°
1 0.1 GHZ
0.1 GHZ
1
2
SCALE FOR |S21|
4
2
6
1
.02
.04
.06
.08
0°
-j250
4
10
8
6
-j25
-j50
-j100
S-PARAMETERS
VDS = 2V, IDS = 10mA
S21
ANG
-0.9
-4.7
-9.5
-18.8
-37.0
-54.0
-59.3
-84.5
-98.2
-111.1
-123.2
-134.6
-145.4
-90°
FREQUENCY
(MHZ)
100
500
1000
2000
4000
6000
8000
10000
12000
14000
16000
18000
20000
S11
MAG
1.000
.999
.996
.983
.928
.877
.811
.748
.694
.649
.614
.588
.570
S12
ANG
179.2
176.0
172.0
164.1
149.0
135.1
122.5
111.2
101.1
92.0
83.5
75.9
68.8
S22
ANG
89.5
87.7
86.4
81.0
72.3
66.0
60.3
57.3
55.2
54.6
55.0
56.2
57.8
MAG
3.721
3.717
3.705
3.658
3.489
3.255
2.999
2.750
2.521
2.319
2.142
1.988
1.853
MAG
.001
.007
.013
.026
.049
.068
.082
.093
.101
.108
.114
.121
.130
MAG
.606
.605
.604
.598
.576
.547
.516
.485
.457
.432
.410
.391
.373
ANG
-0.4
-2.1
-4.2
-8.3
-16.0
-22.9
-28.9
-34.2
-39.1
-43.7
-48.4
-53.2
-58.4
NOTE:* The data includes bonding wires.
n: number of wires
Gate n=2 (0.3mm length, 20um Dia Au wire)
Drain n=2 (0.3mm length, 20um Dia Au wire)
Source n=4 (0.3mm length, 20um Dia Au wire)
Download S-Parameters, click here
Ga (max) & |S21|2 vs. FREQUENCY
15
VDS=2V
IDS=10mA
10
Gain (dB)
Ga (max)
NOISE PARAMETERS
VDS=2V, IDS=10mA
Freq.
(GHz)
2
4
6
8
10
12
14
16
18
20
Γopt
(MAG) (ANG)
0.80
0.74
0.68
0.63
0.58
0.52
0.47
0.42
0.38
0.33
16
31
46
61
75
89
102
114
126
137
NFmin
(dB)
0.33
0.35
0.44
0.53
0.63
0.72
0.84
0.97
1.09
1.22
Rn/50
0.50
0.45
0.40
0.30
0.23
0.18
0.14
0.12
0.10
0.09
|S21|2
5
4
6
8 10 12
Frequency (GHz)
20
30
3
FHX04X, FHX05X, FHX06X
GaAs FET & HEMT Chips
CHIP OUTLINE
50
90
(Unit:
µm)
75
154
75
50
90
450±20
Die Thickness:
100±20µm
For further information please contact:
FUJITSU COMPOUND SEMICONDUCTOR, INC.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
FUJITSU MICROELECTRONICS, LTD.
Compound Semiconductor Division
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone:+44 (0)1628 504800
FAX:+44 (0)1628 504888
CAUTION
Fujitsu Compound Semiconductor Products contain
gallium arsenide
(GaAs)
which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
• Do not put these products into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
Fujitsu Limited reserves the right to change products and specifications without notice.
The information does not convey any license under rights of Fujitsu Limited or others.
© 1999 FUJITSU COMPOUND SEMICONDUCTOR, INC.
Printed in U.S.A. FCSI0999M200
4
75
350±20
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