Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| Maker | Infineon |
| package instruction | HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 9.9 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V |
| Maximum drain current (Abs) (ID) | 0.6 A |
| Maximum drain current (ID) | 0.6 A |
| Maximum drain-source on-resistance | 2.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MO-193AA |
| JESD-30 code | R-PDSO-G6 |
| JESD-609 code | e3 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 6 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 2 W |
| Maximum pulsed drain current (IDM) | 4.8 A |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal surface | Matte Tin (Sn) |
| Terminal form | GULL WING |
| Terminal location | DUAL |
| Maximum time at peak reflow temperature | 30 |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| IRF5801PBF | IRF5801TRPBF | |
|---|---|---|
| Description | Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN | Drain-source voltage (Vdss): 200V Continuous drain current (Id) (at 25°C): 600mA Gate-source threshold voltage: 5.5V @ 250uA Drain-source on-resistance: 2.2Ω @ 360mA, 10V Maximum power dissipation ( Ta=25°C): 2W Type: N channel N channel, 200V, 600mA, 2.2Ω@10V |
| Is it Rohs certified? | conform to | conform to |
| package instruction | HALOGEN FREE AND LEAD FREE, TSOP, 6 PIN | LEAD FREE, TSOP-6 |
| Reach Compliance Code | compliant | compliant |
| ECCN code | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 9.9 mJ | 9.9 mJ |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 200 V | 200 V |
| Maximum drain current (Abs) (ID) | 0.6 A | 0.6 A |
| Maximum drain current (ID) | 0.6 A | 0.6 A |
| Maximum drain-source on-resistance | 2.2 Ω | 2.2 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | MO-193AA | MO-193AA |
| JESD-30 code | R-PDSO-G6 | R-PDSO-G6 |
| JESD-609 code | e3 | e3 |
| Humidity sensitivity level | 1 | 1 |
| Number of components | 1 | 1 |
| Number of terminals | 6 | 6 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Maximum operating temperature | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR |
| Package form | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 260 | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 2 W | 2 W |
| Maximum pulsed drain current (IDM) | 4.8 A | 4.8 A |
| Certification status | Not Qualified | Not Qualified |
| surface mount | YES | YES |
| Terminal surface | Matte Tin (Sn) | Matte Tin (Sn) |
| Terminal form | GULL WING | GULL WING |
| Terminal location | DUAL | DUAL |
| Maximum time at peak reflow temperature | 30 | NOT SPECIFIED |
| transistor applications | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | SILICON |
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