FDC6306P
February 1999
FDC6306P
Dual P-Channel 2.5V Specified PowerTrench™ MOSFET
General Description
These P-Channel 2.5V specified MOSFETs are produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for applications
where the bigger more expensive SO-8 and TSSOP-8
packages are impractical.
Features
•
-1.9 A, -20 V. R
DS(on)
= 0.170
Ω
@ V
GS
= -4.5 V
R
DS(on)
= 0.250Ω @ V
GS
= -2.5 V
•
•
•
•
Low gate charge (3 nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
SuperSOTTM-6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
Applications
•
Load switch
•
Battery protection
•
Power management
D2
S1
D1
4
3
5
2
G2
SuperSOT
TM
-6
S2
G1
T
A
= 25°C unless otherwise noted
6
1
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
Ratings
-20
(Note 1a)
Units
V
V
A
W
±
8
-1.9
-5
0.96
0.9
0.7
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
130
60
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
.
306
Device
FDC6306P
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
©1999
Fairchild Semiconductor Corporation
FDC6306P Rev. C
FDC6306P
Electrical Characteristics
Symbol
Off Characteristics
BV
DSS
∆
BV
DSS
∆
T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
DS
= -16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
V
GS
= -8 V, V
DS
= 0 V
Min
-20
Typ
Max Units
V
-18
-1
100
-100
mV/
°
C
µ
A
nA
nA
On Characteristics
V
GS(th)
∆
V
GS(th)
∆
T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
V
DS
= V
GS
, I
D
= -250
µ
A
I
D
= -250
µ
A, Referenced to 25
°
C
V
GS
= -4.5 V, I
D
= -1.9 A
V
GS
= -4.5 V, I
D
= -1.9 A @125
°
C
V
GS
= -2.5 V, I
D
= -1.7 A
V
GS
= -4.5 V, V
DS
=- 5 V
V
DS
= -5 V, I
D
= -1.9 A
-0.4
-0.9
3
0.127
0.182
0.194
-1.5
V
mV/
°
C
0.170
0.270
0.250
Ω
I
D(on)
g
FS
-5
4
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= -10 V, V
GS
= 0 V,
f = 1.0 MHz
441
127
67
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= -10 V, I
D
= -1 A,
V
GS
= -4.5 V, R
GEN
= 6
Ω
6
9
14
3
12
18
25
9
4.2
ns
ns
ns
ns
nC
nC
nC
V
DS
= -10 V, I
D
= -1.9 A,
V
GS
= -4.5 V
3
0.7
0.8
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -0.8 A
(Note 2)
-0.8
-0.8
-1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130
°C/W
when
mounted on a 0.125 in
2
pad of 2 oz. copper.
b) 140
°C/W
when
mounted on a 0.005 in
2
pad of 2 oz. copper.
c) 180
°C/W
when
mounted on a 0.0015 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDC6306P Rev. C
FDC6306P
Typical Characteristics
12
- I
D
, DRAIN-SOURCE CURRENT (A)
2
-4.0V
R
D S(on)
, NORMALI ZED
DRAIN-SOURCE O N-RESI STANCE
V
GS
= -4.5V
10
8
6
-3.5V
-3.0V
1.8
1.6
1.4
1.2
1
0.8
V
GS
= -2 .5 V
-3.0V
-3.5V
-4.0V
-4.5V
-2.5V
4
2
0
0
1
2
3
4
5
-V
DS
, DRAIN-SOURCE VOLTAG E (V)
-2.0V
0
2
4
6
8
10
- I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.5
1.6
DRAIN-SOURCE O N-RESISTANCE
1.4
V
GS
= -4.5V
R
D S(ON)
, ON-RESISTANCE (OHM)
I
D
= -1.9A
I
D
= -1A
0.4
R
D S(ON)
, NORMALIZED
1.2
0.3
1
0.2
TJ = 1 25° C
0.8
0.1
25° C
0.6
-50
0
-25
0
25
50
75
100
125
150
T , JUNCTION T EMPERAT URE (°C)
J
1
2
3
4
5
-V
GS
, GATE TO SOURCE VOLT AG E (V)
Figure 3. On-Resistance Variation
with Temperature.
10
10
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
T
J
= -55° C
25° C
1 25° C
8
-I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= -5V
- I
D
, DRAIN CURRENT (A)
V
GS
= 0V
1
T = 125°C
J
25 °C
-55°C
6
0.1
4
0.01
2
0.001
0
0
1
2
3
4
5
-V
GS
, GATE T O SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-V
SD
, BODY DIODE FORWARD VOLT AGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDC6306P Rev. C
FDC6306P
Typical Characteristics
5
-V
GS
, GATE-SOURCE VOLT AGE (V)
(continued)
1000
I
D
= -1.9A
4
V
DS
= -5V
CAPACI TANCE (pF)
-10V
-15V
Ciss
300
3
2
100
Coss
f = 1 MHz
V
GS
= 0 V
Crss
1
0
0
1
2
Q
g
, GAT E CHARGE (nC)
3
4
30
0.1
0.2
0.5
1
2
5
10
20
-V
DS
, DRAIN T O SOURCE VOLTAGE (V)
Figure 7. Gate-Charge Characteristics.
30
10
-I
D
, DRAIN CURRENT (A)
3
1
0.3
0.1
N)
S(O
RD
IT
LIM
Figure 8. Capacitance Characteristics.
5
100
us
4
POWER (W)
1m
s
10m
10
1s
DC
SINGLE PULSE
R
θJA
=180°C/W
T
A
= 25°C
s
3
0m
s
2
0.03
0.01
0.1
V
GS
= -4.5V
SINGLE PULSE
R
θJA
= 180°C/W
T
A
= 25°C
0.2
1
0.5
1
2
5
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
20
50
0
0.01
0.1
1
10
SINGLE PULSE TIME (SEC)
100
300
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
TRANSIENT THERMAL RESISTANCE
1
0.5
D = 0.5
r(t), NORMALIZED EFFECTIVE
0.2
0.1
0.05
0.2
0.1
0.05
0.02
0.01
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
=180°C/W
P(pk)
t
1
t
2
0.02
0.01
0.0001
Single Pulse
T
J
- T
A
= P * R JA (t)
θ
Duty Cycle, D = t
1
/ t
2
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDC6306P Rev. C
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
CoolFET™
CROSSVOLT™
E
2
CMOS
TM
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
HiSeC™
DISCLAIMER
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
UHC™
VCX™
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
京公网安备 11010802033920号
EEWORLD
