Synchronous DRAM Module, 1MX64, 7ns, CMOS, PDMA144,
Parameter Name | Attribute value |
Maker | FUJITSU |
package instruction | DIMM, DIMM144,32 |
Reach Compliance Code | compliant |
Maximum access time | 7 ns |
Maximum clock frequency (fCLK) | 125 MHz |
I/O type | COMMON |
JESD-30 code | R-PDMA-N144 |
memory density | 67108864 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE |
memory width | 64 |
Number of terminals | 144 |
word count | 1048576 words |
character code | 1000000 |
Maximum operating temperature | 70 °C |
Minimum operating temperature | |
organize | 1MX64 |
Output characteristics | 3-STATE |
Package body material | PLASTIC/EPOXY |
encapsulated code | DIMM |
Encapsulate equivalent code | DIMM144,32 |
Package shape | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V |
Certification status | Not Qualified |
refresh cycle | 2048 |
Maximum standby current | 0.012 A |
Maximum slew rate | 0.86 mA |
Nominal supply voltage (Vsup) | 3.3 V |
surface mount | NO |
technology | CMOS |
Temperature level | COMMERCIAL |
Terminal form | NO LEAD |
Terminal pitch | 0.8 mm |
Terminal location | DUAL |
GOB1UV6432A-80Q-S | GOB1UV6432B-60Q-S | GOB1UV6432A-10Q-S | GOB1UV6432A-60Q-S | GOB1UV6432A-70Q-S | GOB1UV6432B-10Q-S | GOB1UV6432B-70Q-S | GOB1UV6432B-80Q-S | |
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Description | Synchronous DRAM Module, 1MX64, 7ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 5.5ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 7ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 5.5ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 6ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 7ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 6ns, CMOS, PDMA144, | Synchronous DRAM Module, 1MX64, 7ns, CMOS, PDMA144, |
Maker | FUJITSU | FUJITSU | FUJITSU | FUJITSU | FUJITSU | FUJITSU | FUJITSU | FUJITSU |
package instruction | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 | DIMM, DIMM144,32 |
Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
Maximum access time | 7 ns | 5.5 ns | 7 ns | 5.5 ns | 6 ns | 7 ns | 6 ns | 7 ns |
Maximum clock frequency (fCLK) | 125 MHz | 167 MHz | 100 MHz | 167 MHz | 143 MHz | 100 MHz | 143 MHz | 125 MHz |
I/O type | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
JESD-30 code | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 | R-PDMA-N144 |
memory density | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit | 67108864 bit |
Memory IC Type | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE | SYNCHRONOUS DRAM MODULE |
memory width | 64 | 64 | 64 | 64 | 64 | 64 | 64 | 64 |
Number of terminals | 144 | 144 | 144 | 144 | 144 | 144 | 144 | 144 |
word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
character code | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 | 1000000 |
Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C | 70 °C |
organize | 1MX64 | 1MX64 | 1MX64 | 1MX64 | 1MX64 | 1MX64 | 1MX64 | 1MX64 |
Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
encapsulated code | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM | DIMM |
Encapsulate equivalent code | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 | DIMM144,32 |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY | MICROELECTRONIC ASSEMBLY |
power supply | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
refresh cycle | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 | 2048 |
Maximum standby current | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A | 0.012 A |
Maximum slew rate | 0.86 mA | 1.08 mA | 0.74 mA | 1.08 mA | 0.94 mA | 0.74 mA | 0.94 mA | 0.86 mA |
Nominal supply voltage (Vsup) | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V | 3.3 V |
surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
technology | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal pitch | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
Terminal location | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL | DUAL |