GaAs Schottky Diode
Antiparallel Pair
Technical Data
HSCH-9551
Features
• Low Junction Capacitance—
typically 40 f F
• Low Series Resistance—
typically 3
Ω
• Large Bond Pads Suitable
for Wire-bond or Flip-chip
Assembly
• Polyimide Scratch
Protection
Description
The HSCH-9551 is an integrated
antiparallel pair of GaAs Schottky
barrier diodes. It is a beamless
version of the HSCH-9251
antiparallel pair beam lead diode.
Chip Size:
Chip Size Tolerance:
Chip Thickness:
Chip Thickness Tolerance:
Bond Pad Sizes:
620 x 325
µm
(24.4 x 12.8 mils)
±10 µm
(±0.4 mils)
100
µm
(4 mils)
±15 µm
(±0.6 mils)
100 x 200
µm
(3.9 x 7.9 mils)
Applications
The HSCH-9551 is a high-
performance millimeter wave
diode that can be used as a sub-
harmonically pumped mixer or
frequency multiplier in microwave
and millimeter wave transceivers.
Specifications
• V
F
(1 mA): 700-800 mV
• V
F
(10 mA): 800- 850 mV
• R
S
(5 mA): <6
Ω
• C
J
(per diode): <0.050 pF
www.hp.com/go/rf
For technical assistance or the location of
your nearest Hewlett-Packard sales
office, distributor or representative call:
Americas/Canada:
1-800-235-0312 or
408-654-8675
Far East/Australasia:
Call your local HP
sales office.
Japan:
(81 3) 3335-8152
Europe:
Call your local HP sales office.
This data sheet contains a variety of typical and guaranteed performance data. The
information supplied should not be interpreted as a complete list of circuit specifica-
tions. In this data sheet the term
typical
refers to the 50th percentile performance. For
additional information contact your local HP sales representative.
Data subject to change.
Copyright © 1999 Hewlett-Packard Co.
5968-4222E (2/99)
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