NE32984D-T1 datasheet, PDF - EEWORLD Datasheet

NE32984D-T1: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84D, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size34KB，4 Pages; ManufacturerCalifornia Eastern Labs; Websitehttp://www.cel.com/

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NE32984D-T1 Overview

RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84D, 4 PIN

Parameter Name	Attribute value
Maker	California Eastern Labs
package instruction	MICROWAVE, X-CXMW-F4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH RELIABILITY
Configuration	SINGLE
Minimum drain-source breakdown voltage	4 V
Maximum drain current (ID)	0.09 A
FET technology	HETERO-JUNCTION
highest frequency band	X BAND
JESD-30 code	X-CXMW-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED
Package form	MICROWAVE
Polarity/channel type	N-CHANNEL
Minimum power gain (Gp)	11 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	UNSPECIFIED
Transistor component materials	SILICON

	NE32984D-T1	NE32984D-S
Description	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84D, 4 PIN	RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, METAL CERAMIC, 84D, 4 PIN
package instruction	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4
Contacts	4	4
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HIGH RELIABILITY	HIGH RELIABILITY
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	4 V	4 V
Maximum drain current (ID)	0.09 A	0.09 A
FET technology	HETERO-JUNCTION	HETERO-JUNCTION
highest frequency band	X BAND	X BAND
JESD-30 code	X-CXMW-F4	X-CXMW-F4
Number of components	1	1
Number of terminals	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED	UNSPECIFIED
Package form	MICROWAVE	MICROWAVE
Polarity/channel type	N-CHANNEL	N-CHANNEL
Minimum power gain (Gp)	11 dB	11 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	UNSPECIFIED	UNSPECIFIED
Transistor component materials	SILICON	SILICON

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