UFZTA42 datasheet, PDF - EEWORLD Datasheet

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UFZTA42: DescriptionPower Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size120KB，2 Pages; ManufacturerDiodes; Websitehttp://www.diodes.com/; Environmental Compliance

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UFZTA42 Overview

Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UFZTA42 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Diodes
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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SOT223 NPN SILICON PLANAR

HIGH VOLTAGE TRANSISTOR

ISSUE

3

–

SEPTEMBER 2007

7

ISSUE 2 NOVEMBER 93

FEATURES

* Suitable for video output stages in TV sets

and switch mode power supplies

* High breakdown voltage

FZTA42

C

E

COMPLIMENTARY TYPE FZTA92

PARTMARKING DETAIL DEVICE TYPE IN FULL

C

B

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Base Current

Continuous Collector Current

Power Dissipation at T

amb

=25°C

Operating and Storage Temperature Range

SYMBOL

V

CBO

V

CEO

V

EBO

I

B

I

C

P

tot

T

j

:T

stg

VALUE

300

5

100

500

2

-55 to +150

UNIT

V

mA

W

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage

Emitter-Base

Breakdown Voltage

Collector Cut-Off

Current

Collector-Emitter

Saturation Voltage

Base-Emitter

Saturation Voltage

SYMBOL

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

MIN.

300

5

0.1

0.5

0.9

25

40

50

6

MHz

pF

TYP.

MAX.

UNIT

V

µ

A

µ

A

CONDITIONS.

I

C

=100

µ

A, I

E

=0

I

C

=1mA, I

B

=0*

I

E

=100

µ

A, I

C

=0

V

CB

=200V, I

E

=0

V

EB

=5V, I

C

=0

I

C

=20mA, I

B

=2mA

I

C

=20mA, I

B

=2mA

I

C

=1mA, V

CE

=10V*

I

C

=10mA, V

CE

=10V*

I

C

=30mA, V

CE

=10V*

I

C

=10mA, V

CE

=20V

f=20MHz

V

CB

=20V, f=1MHz

Emitter Cut-Off Current I

EBO

V

CE(sat)

V

BE(sat)

V

Static Forward Current h

FE

Transfer Ratio

Transition

Frequency

Output Capacitance

f

T

C

obo

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

For typical characteristics graphs see FMMTA42 datasheet.

3 - 302

UFZTA42 Related Products

	UFZTA42
Description	Power Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified?	conform to
Maker	Diodes
Parts packaging code	SOT-223
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	300 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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