BD648F datasheet, PDF - EEWORLD Datasheet

BD648F: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size349KB，8 Pages; ManufacturerNorth American Philips Discrete Products Div

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BD648F Overview

Transistor,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	North American Philips Discrete Products Div
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	8 A
Configuration	DARLINGTON
Minimum DC current gain (hFE)	750
JESD-609 code	e0
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	150 MHz

	BD648F	BD644F	BD650F	BD652F	BD646F
Description	Transistor,	Transistor,	Transistor,	Transistor,	Transistor,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	North American Philips Discrete Products Div	North American Philips Discrete Products Div	North American Philips Discrete Products Div	North American Philips Discrete Products Div	North American Philips Discrete Products Div
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Maximum collector current (IC)	8 A	8 A	8 A	8 A	8 A
Configuration	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
Minimum DC current gain (hFE)	750	750	750	750	750
JESD-609 code	e0	e0	e0	e0	e0
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	20 W	20 W	20 W	20 W	20 W
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Nominal transition frequency (fT)	150 MHz	150 MHz	150 MHz	150 MHz	150 MHz

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