RG3M datasheet, PDF - EEWORLD Datasheet

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RG3M: DescriptionRectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size65KB，2 Pages; ManufacturerGeneral Instrument Corp

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RG3M Overview

Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon,

RG3M Parametric

Parameter Name	Attribute value
Maker	General Instrument Corp
Reach Compliance Code	unknown
Other features	PATENTED DEVICE
application	EFFICIENCY
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	100 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Maximum output current	3 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1000 V
Maximum reverse current	5 µA
Maximum reverse recovery time	0.5 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL

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	RG3M	RG3K	RG3A	RG3B	RG3D	RG3G	RG3J
Description	Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 50V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 100V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 220V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 400V V(RRM), Silicon,	Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon,
Maker	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp	General Instrument Corp
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	PATENTED DEVICE	PATENTED DEVICE	PATENTED DEVICE	PATENTED DEVICE	PATENTED DEVICE	PATENTED DEVICE	PATENTED DEVICE
application	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY	EFFICIENCY
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V	1.3 V
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Maximum non-repetitive peak forward current	100 A	100 A	100 A	100 A	100 A	100 A	100 A
Number of components	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	3 A	3 A	3 A	3 A	3 A	3 A	3 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1000 V	800 V	50 V	100 V	220 V	400 V	600 V
Maximum reverse current	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA	5 µA
Maximum reverse recovery time	0.5 µs	0.4 µs	0.15 µs	0.15 µs	0.15 µs	0.15 µs	0.25 µs
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL

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