SSM9971GM
Dual N-channel Enhancement-mode Power MOSFETs
PRODUCT SUMMARY
BV
DSS
R
DS(ON)
I
D
DESCRIPTION
The SSM9971GM acheives fast switching performance
with low gate charge without a complex drive circuit. It
is suitable for low voltage applications such as DC/DC
converters and general load-switching circuits.
The SSM2310GM is supplied in an RoHS-compliant
SO-8 package, which is widely used for medium power
commercial and industrial surface mount applications.
60V
50mΩ
5A
Pb-free; RoHS-compliant SO-8
D2
D2
D1
D1
G2
S2
SO-8
S1
G1
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
STG
T
J
Parameter
Drain-source voltage
Gate-source voltage
Continuous drain current
3,
T
A
= 25°C
T
A
= 100°C
Pulsed drain current
1,2
Total power dissipation , T
A
= 25°C
Linear derating factor
Storage temperature range
Operating junction temperature range
3
Value
60
±
25
5
3.2
30
2
0.016
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
°C
°C
THERMAL CHARACTERISTICS
Symbol
R
ΘJA
Parameter
Maximum thermal resistance, junction-ambient
3
Value
62.5
Units
°C/W
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
3.Mounted on a square inch of copper pad on FR4 board; 135°C/W when mounted on the minimum pad area required for soldering.
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SSM9971GM
ELECTRICAL CHARACTERISTICS
Symbol
BV
DSS
Parameter
Drain-source breakdown voltage
Breakdown voltage temperature coefficient
(at Tj = 25°C, unless otherwise specified)
Test Conditions
V
GS
=0V, I
D
=250uA
Reference to 25°C, I
D
=1mA
V
GS
=10V, I
D
=5A
V
GS
=4.5V, I
D
=2.5A
Min.
60
-
-
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.06
-
-
-
7
-
-
-
32.5
4.9
8.8
9.6
10
30
5.5
1658
156
109
Max. Units
-
-
50
60
3
-
1
25
±100
-
-
-
-
-
-
-
-
-
-
V
V/°C
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
∆
BV
DSS
/
∆
Tj
R
DS(ON)
Static drain-source on-resistance
2
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate threshold voltage
Forward transconductance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=5A
Drain-source leakage current
V
DS
=60V, V
GS
=0V
V
DS
=48V ,V
GS
=0V, Tj = 70°C
V
GS
=±25V
I
D
=5A
V
DS
=48V
V
GS
=10V
V
DS
=30V
I
D
=5A
R
G
=3.3Ω , V
GS
=10V
R
D
=6Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-source leakage current
Total gate charge
2
Gate-source charge
Gate-drain ("Miller") charge
Turn-on delay time
2
Rise time
Turn-off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward voltage
2
Test Conditions
I
S
=1.6A, V
GS
=0V
I
S
=5A, V
GS
=0V,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
29.2
48
Max. Units
1.2
-
-
V
ns
nC
Reverse-recovery time
Reverse-recovery charge
Notes:
1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C.
2.Pulse width <300us, duty cycle <2%.
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SSM9971GM
35
35
T
A
=25 C
30
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
25
10V
6.0V
4.5V
T
A
=150 C
30
o
10V
6.0V
4.5V
25
20
20
15
15
V
G
=3.0V
10
10
V
G
=3.0V
5
5
0
0
1
2
3
4
5
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical output characteristics
Fig 2. Typical output characteristics
52
3.0
I
D
=5A
48
I
D
=5A
2.5
T
A
=25 C
Normalized R
DS(ON)
2.0
o
V
G
=10V
R
DS(ON)
(mΩ )
44
1.5
40
1.0
36
0.5
32
3
5
7
9
11
0.0
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-resistance vs. gate voltage
Fig 4. Normalized on-resistance
vs. junction temperature
3
100
2.5
10
2
1
V
GS(th)
(V)
I
S
(A)
T
j
=150 C
o
T
j
=25 C
o
1.5
1
0.1
0.5
0.01
0.1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward characteristic of
the reverse diode
Fig 6. Gate threshold voltage vs.
junction temperature
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SSM9971GM
f=1.0MHz
14
10000
I
D
=5A
12
V
GS
, Gate to Source Voltage (V)
10
V
DS
=48V
V
DS
=38V
V
DS
=30V
Ciss
1000
8
6
Coss
4
100
Crss
2
0
0
5
10
15
20
25
30
35
40
10
1
5
Q
G
, Total Gate Charge (nC)
V
DS
, Drain-to-Source Voltage (V)
9
13
17
21
25
29
Fig 7. Gate charge characteristics
Fig 8. Typical capacitance characteristics
100
1
Duty foctor=0.5
Normalized Thermal Response (R
θja
)
10
0.2
1ms
I
D
(A)
0.1
0.1
0.05
1
10ms
100ms
0.02
0.01
P
DM
0.01
Single Pulse
t
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
θja
=135°C/W
0.1
T
A
=25 C
Single Pulse
o
1s
DC
0.01
0.001
0.1
1
10
100
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum safe operating area
Fig 10. Effective transient thermal impedance
V
DS
90%
V
G
Q
G
10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching time waveforms
Fig 12. Gate charge diagram
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SSM9971GM
PHYSICAL DIMENSIONS
D
SYMBOL
A
A1
H
E
MIN
1.35
0.10
0.33
0.19
4.80
3.80
5.80
0.38
MAX
1.75
0.25
0.51
0.25
5.00
4.00
6.50
1.27
B
C
D
E
e
A
C
A1
e
H
L
L
1.27(TYP)
B
All dimensions in millimeters.
Dimensions do not include mold protrusions.
PART MARKING
PART NUMBER: 9971GM
XXXXXX
YWWSSS
DATE/LOT CODE: (YWWSSS)
Y = last digit of the year
WW = week
SSS = lot code sequence
PACKING:
Moisture sensitivity level MSL3
3000 pcs in antistatic tape on a 13 inch (330mm) reel, packed in a moisture barrier bag (MBB).
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
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