SSM90T03GH,J
N-channel Enhancement-mode Power MOSFET
Low gate-charge
Simple drive requirement
Fast switching
Pb-free; RoHS compliant.
D
BV
DSS
R
DS(ON)
I
D
30V
4mΩ
75A
G
S
DESCRIPTION
The SSM90T03GH is in a TO-252 package, which is widely used for
commercial and industrial surface mount applications, and is well suited
for low voltage applications such as DC/DC converters. The through-hole
version, the SSM90T03GJ in TO-251, is available for low-footprint vertical
mounting. These devices are manufactured with an advanced process,
providing improved on-resistance and switching performance.
G
D
S
G D
S
TO-252 (H)
TO-251 (J)
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
V
GS
I
D
@ T
C
=25°C
I
D
@ T
C
=100°C
I
DM
P
D
@ T
C
=25°C
E
AS
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
30
±20
75
63
350
96
0.7
29
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/°C
mJ
°C
°C
THERMAL DATA
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
1.3
110
Units
°C/W
°C/W
5/17/2005 Rev.2.4
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SSM90T03GH,J
ELECTRICAL CHARACTERISTICS @ T
j
=25°C (unless otherwise specified)
Symbol
BV
DSS
Parameter
Drain-Source Breakdown Voltage
Test Conditions
V
GS
=0V, I
D
=250uA
Min.
30
-
-
-
0.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
0.015
Max. Units
-
-
4
6
3
-
1
25
±100
96
-
-
-
-
-
-
-
-
V
V/°C
mΩ
mΩ
V
S
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
∆
BV
DSS
/
∆
Tj
R
DS(ON)
Breakdown Voltage Temperature Coefficient
Reference to 25°C, I
D
=1mA
Static Drain-Source On-Resistance
2
V
GS
=10V, I
D
=45A
V
GS
=4.5V, I
D
=30A
-
-
-
55
-
-
-
60
8.5
38
14
83
66
120
1010
890
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25
o
C)
Drain-Source Leakage Current (T
j
=150
o
C)
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=30A
V
DS
=30V, V
GS
=0V
V
DS
=24V, V
GS
=0V
V
GS
=±20V
I
D
=40A
V
DS
=24V
V
GS
=4.5V
V
DS
=15V
I
D
=30A
R
G
=3.3Ω ,V
GS
=10V
R
D
=0.5Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4090 6540
Source-Drain Diode
Symbol
V
SD
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
Test Conditions
I
S
=45A, V
GS
=0V
I
S
=30A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
51
63
Max. Units
1.3
-
-
V
ns
nC
t
rr
Q
rr
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.V
DD
=25V , L=100uH , R
G
=25Ω , I
AS
=24A.
5/17/2005 Rev.2.4
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SSM90T03GH,J
200
160
T
C
=25 C
160
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
5.0V
4.5V
140
T
C
= 1 50
o
C
120
10V
7.0V
5.0V
4.5V
V
G
=3.0V
100
120
80
80
V
G
=3.0V
60
40
40
20
0
0
1
2
3
0
0
1
2
3
4
5
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
5.0
2.0
I
D
=20A
Normalized R
DS(ON)
T
C
=25 C
R
DS(ON)
(mΩ)
4.5
1.8
o
I
D
= 45 A
V
G
=10V
1.5
1.3
1.0
0.8
4.0
0.5
0.3
3.5
0.0
2
4
6
8
10
12
-50
0
50
100
150
V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance vs. Gate Voltage
Fig 4. Normalized On-Resistance
vs. Junction Temperature
2
20
15
1.5
T
j
=150
o
C
Is (A)
10
T
j
=25
o
C
V
GS(th)
(V)
1
5
0.5
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
-50
25
100
175
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature (
o
C)
Fig 5. Forward Characteristic of
Reverse Diode
5/17/2005 Rev.2.4
Fig 6. Gate Threshold Voltage vs.
Junction Temperature
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SSM90T03GH,J
f=1.0MHz
14
10000
I
D
= 40 A
V
GS
, Gate to Source Voltage (V)
12
10
V
DS
=15V
V
DS
=20V
V
DS
=24V
C (pF)
1000
Ciss
8
Coss
Crss
6
4
2
0
100
0
20
40
60
80
100
120
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
1ms
0.1
0.1
0.05
P
DM
0.02
10
10ms
t
T
T
c
=25 C
Single Pulse
1
0.1
1
10
o
100ms
DC
0.01
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
100
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
,Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
4.5V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
5/17/2005 Rev.2.4
Fig 12. Gate Charge Waveform
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SSM90T03GH,J
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, express or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
5/17/2005 Rev.2.4
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