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HY23V08200D-100

Description
MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42
Categorystorage    storage   
File Size82KB,6 Pages
ManufacturerSK Hynix
Websitehttp://www.hynix.com/eng/
Download Datasheet Parametric Compare View All

HY23V08200D-100 Overview

MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42

HY23V08200D-100 Parametric

Parameter NameAttribute value
MakerSK Hynix
Parts packaging codeDIP
package instructionDIP,
Contacts42
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum access time100 ns
Spare memory width8
JESD-30 codeR-PDIP-T42
length52.451 mm
memory density8388608 bit
Memory IC TypeMASK ROM
memory width16
Number of functions1
Number of terminals42
word count524288 words
character code512000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize512KX16
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Package shapeRECTANGULAR
Package formIN-LINE
Parallel/SerialPARALLEL
Certification statusNot Qualified
Maximum seat height4.826 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountNO
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formTHROUGH-HOLE
Terminal pitch2.54 mm
Terminal locationDUAL
width15.24 mm
HY23V08200
Description
512K X 16/1M X 8 BIT
CMOS MASK ROM
The HY23V08200 high performance read only memory is organized either as 1,048,576 x 8 bit (byte mode) or
as 524,288 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery
operation.
The large size of 8M bit memory density is ideal for character generator, data or program
memory in micro-processor application. The HY23V08200 is packaged 42pin DIP or 44 pin SOP.
Key features
• Switchable Organization
Byte Mode : 1,048,576 X 8 bit
Word Mode : 524,288 X 16 bit
• Single 3.3V power supply operation
• Access Time : 100/120ns (Max)
• Standby Current : 50 (Max)
• Operating Current : 35 (Max)
• TTL compatible inputs and outputs
• 3-State outputs for wired-OR expansion
• Word or Byte switchable by BHE pin
• Programmable CE or OE pin
• Fully static operation
• Package
HY23V08200D
: 42pin Plastic DIP(600 mil)
HY23V08200S
: 44pin Plastic SOP(500mil)
¡
 
Pin Description
Pin
A0~A18
Q0~Q14
Q15/A-1
BHE
CEB*
OEB*
VCC
VSS
NC
Function
Address inputs
Data Outputs
Output Q15(Word Mode)/
LSB Address(Byte Mode)
Byte High Enable input
(Word/Byte selection)
Chip Enable input
Output Enable input
Power supply
Ground
No Connection
Pin Configuration
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
VSS
OEB
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
NC
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CEB
VSS
OEB
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
* User selectable polarity
44
43
42
41
40
39
38
37
36
35
44SOP
34
33
32
31
30
29
28
27
26
25
24
23
NC
NC
A8
A9
A10
A11
A12
A13
A14
A15
A16
BHE
VSS
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
42DIP
HY23V08200D
HY23V08200S
Rev0 Page 1 of 6

HY23V08200D-100 Related Products

HY23V08200D-100 HY23V08200S-100 HY23V08200D-70 HY23V08200D-120 HY23V08200S-70 HY23V08200S-120
Description MASK ROM, 512KX16, 100ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 MASK ROM, 512KX16, 100ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44 MASK ROM, 512KX16, 70ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 MASK ROM, 512KX16, 120ns, CMOS, PDIP42, 0.600 INCH, PLASTIC, DIP-42 MASK ROM, 512KX16, 70ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44 MASK ROM, 512KX16, 120ns, CMOS, PDSO44, 0.500 INCH, PLASTIC, SOP-44
Maker SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix SK Hynix
Parts packaging code DIP SOIC DIP DIP SOIC SOIC
package instruction DIP, SOP, DIP, DIP, SOP, SOP,
Contacts 42 44 42 42 44 44
Reach Compliance Code unknown unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Maximum access time 100 ns 100 ns 70 ns 120 ns 70 ns 120 ns
Spare memory width 8 8 8 8 8 8
JESD-30 code R-PDIP-T42 R-PDSO-G44 R-PDIP-T42 R-PDIP-T42 R-PDSO-G44 R-PDSO-G44
length 52.451 mm 28.5 mm 52.451 mm 52.451 mm 28.5 mm 28.5 mm
memory density 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit 8388608 bit
Memory IC Type MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM MASK ROM
memory width 16 16 16 16 16 16
Number of functions 1 1 1 1 1 1
Number of terminals 42 44 42 42 44 44
word count 524288 words 524288 words 524288 words 524288 words 524288 words 524288 words
character code 512000 512000 512000 512000 512000 512000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 70 °C 70 °C 70 °C 70 °C 70 °C 70 °C
organize 512KX16 512KX16 512KX16 512KX16 512KX16 512KX16
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
encapsulated code DIP SOP DIP DIP SOP SOP
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form IN-LINE SMALL OUTLINE IN-LINE IN-LINE SMALL OUTLINE SMALL OUTLINE
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 4.826 mm 3.2 mm 4.826 mm 4.826 mm 3.2 mm 3.2 mm
Maximum supply voltage (Vsup) 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V 3.6 V
Minimum supply voltage (Vsup) 3 V 3 V 3 V 3 V 3 V 3 V
Nominal supply voltage (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
surface mount NO YES NO NO YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL COMMERCIAL
Terminal form THROUGH-HOLE GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING
Terminal pitch 2.54 mm 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL
width 15.24 mm 12.6 mm 15.24 mm 15.24 mm 12.6 mm 12.6 mm
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