DRAM, 1MX32, 120ns, CMOS, PDIP48
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | APTA Group Inc |
| package instruction | DIP, DIP48,.9 |
| Reach Compliance Code | unknown |
| Maximum access time | 120 ns |
| I/O type | COMMON |
| JESD-30 code | R-PDIP-T48 |
| JESD-609 code | e0 |
| memory density | 33554432 bit |
| Memory IC Type | OTHER DRAM |
| memory width | 32 |
| Number of terminals | 48 |
| word count | 1048576 words |
| character code | 1000000 |
| Maximum operating temperature | 70 °C |
| Minimum operating temperature | |
| organize | 1MX32 |
| Output characteristics | 3-STATE |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | DIP |
| Encapsulate equivalent code | DIP48,.9 |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| power supply | 5 V |
| Certification status | Not Qualified |
| refresh cycle | 1024 |
| Maximum standby current | 0.11 A |
| Maximum slew rate | 0.645 mA |
| Nominal supply voltage (Vsup) | 5 V |
| surface mount | NO |
| technology | CMOS |
| Temperature level | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE |
| Terminal pitch | 2.54 mm |
| Terminal location | DUAL |
| MD321000FKX-12/AD7 | MD321000FKX-10/AD6 | MD321000FKX-10/AD4 | MD321000FKX-10/AD7 | |
|---|---|---|---|---|
| Description | DRAM, 1MX32, 120ns, CMOS, PDIP48 | DRAM, 1MX32, 100ns, CMOS, PDIP48 | DRAM, 1MX32, 100ns, CMOS, PDIP48 | DRAM, 1MX32, 100ns, CMOS, PDIP48 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible |
| package instruction | DIP, DIP48,.9 | DIP, DIP48,.9 | DIP, DIP48,.9 | DIP, DIP48,.9 |
| Reach Compliance Code | unknown | unknown | unknown | unknow |
| Maximum access time | 120 ns | 100 ns | 100 ns | 100 ns |
| I/O type | COMMON | COMMON | COMMON | COMMON |
| JESD-30 code | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 | R-PDIP-T48 |
| JESD-609 code | e0 | e0 | e0 | e0 |
| memory density | 33554432 bit | 33554432 bit | 33554432 bit | 33554432 bi |
| Memory IC Type | OTHER DRAM | OTHER DRAM | OTHER DRAM | OTHER DRAM |
| memory width | 32 | 32 | 32 | 32 |
| Number of terminals | 48 | 48 | 48 | 48 |
| word count | 1048576 words | 1048576 words | 1048576 words | 1048576 words |
| character code | 1000000 | 1000000 | 1000000 | 1000000 |
| Maximum operating temperature | 70 °C | 70 °C | 70 °C | 70 °C |
| organize | 1MX32 | 1MX32 | 1MX32 | 1MX32 |
| Output characteristics | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| encapsulated code | DIP | DIP | DIP | DIP |
| Encapsulate equivalent code | DIP48,.9 | DIP48,.9 | DIP48,.9 | DIP48,.9 |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | IN-LINE | IN-LINE | IN-LINE |
| power supply | 5 V | 5 V | 5 V | 5 V |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| refresh cycle | 1024 | 1024 | 1024 | 1024 |
| Maximum standby current | 0.11 A | 0.11 A | 0.11 A | 0.11 A |
| Maximum slew rate | 0.645 mA | 0.725 mA | 0.725 mA | 0.725 mA |
| Nominal supply voltage (Vsup) | 5 V | 5 V | 5 V | 5 V |
| surface mount | NO | NO | NO | NO |
| technology | CMOS | CMOS | CMOS | CMOS |
| Temperature level | COMMERCIAL | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE | THROUGH-HOLE |
| Terminal pitch | 2.54 mm | 2.54 mm | 2.54 mm | 2.54 mm |
| Terminal location | DUAL | DUAL | DUAL | DUAL |
| Maker | APTA Group Inc | - | APTA Group Inc | APTA Group Inc |
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