M5M4256AP-85 datasheet, PDF - EEWORLD Datasheet

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M5M4256AP-85: DescriptionPage Mode DRAM, 256KX1, 85ns, NMOS, PDIP16, 0.300 INCH, PLASTIC, DIP-16; Categorystorage storage; File Size363KB，9 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M5M4256AP-85 Overview

Page Mode DRAM, 256KX1, 85ns, NMOS, PDIP16, 0.300 INCH, PLASTIC, DIP-16

M5M4256AP-85 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	DIP
package instruction	DIP, DIP16,.3
Contacts	16
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	PAGE
Maximum access time	85 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE
JESD-30 code	R-PDIP-T16
JESD-609 code	e0
length	19 mm
memory density	262144 bit
Memory IC Type	PAGE MODE DRAM
memory width	1
Number of functions	1
Number of ports	1
Number of terminals	16
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	256
Maximum seat height	4.5 mm
Maximum slew rate	0.07 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	NMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

M5M4256AP-85 Related Products

	M5M4256AP-85	M5M4256AP-15	M5M4256AL-15	M5M4256AJ-85	M5M4256AJ-10	M5M4256AJ-15
Description	Page Mode DRAM, 256KX1, 85ns, NMOS, PDIP16, 0.300 INCH, PLASTIC, DIP-16	Page Mode DRAM, 256KX1, 150ns, NMOS, PDIP16, 0.300 INCH, PLASTIC, DIP-16	Page Mode DRAM, 256KX1, 150ns, NMOS, PZIP16, 0.325 INCH, PLASTIC, ZIP-16	Page Mode DRAM, 256KX1, 85ns, NMOS, PQCC18, PLASTIC, LCC-18	Page Mode DRAM, 256KX1, 100ns, NMOS, PQCC18, PLASTIC, LCC-18	Page Mode DRAM, 256KX1, 150ns, NMOS, PQCC18, PLASTIC, LCC-18
Is it lead-free?	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	DIP	DIP	ZIP	LCC	LCC	LCC
package instruction	DIP, DIP16,.3	DIP, DIP16,.3	ZIP, ZIP16,.1	QCCJ, LDCC18,.33X.53	QCCJ, LDCC18,.33X.53	QCCJ, LDCC18,.33X.53
Contacts	16	16	16	18	18	18
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	PAGE	PAGE	PAGE	PAGE	PAGE	PAGE
Maximum access time	85 ns	150 ns	150 ns	85 ns	100 ns	150 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH	RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH
I/O type	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE	SEPARATE
JESD-30 code	R-PDIP-T16	R-PDIP-T16	R-PZIP-T16	R-PQCC-J18	R-PQCC-J18	R-PQCC-J18
JESD-609 code	e0	e0	e0	e0	e0	e0
length	19 mm	19 mm	20.15 mm	12.45 mm	12.45 mm	12.45 mm
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM	PAGE MODE DRAM
memory width	1	1	1	1	1	1
Number of functions	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1
Number of terminals	16	16	16	18	18	18
word count	262144 words	262144 words	262144 words	262144 words	262144 words	262144 words
character code	256000	256000	256000	256000	256000	256000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	256KX1	256KX1	256KX1	256KX1	256KX1	256KX1
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	DIP	ZIP	QCCJ	QCCJ	QCCJ
Encapsulate equivalent code	DIP16,.3	DIP16,.3	ZIP16,.1	LDCC18,.33X.53	LDCC18,.33X.53	LDCC18,.33X.53
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	IN-LINE	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	256	256	256	256	256	256
Maximum seat height	4.5 mm	4.5 mm	8.3 mm	3.5 mm	3.5 mm	3.5 mm
Maximum slew rate	0.07 mA	0.055 mA	0.055 mA	0.07 mA	0.065 mA	0.055 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	YES	YES	YES
technology	NMOS	NMOS	NMOS	NMOS	NMOS	NMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	J BEND	J BEND	J BEND
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	ZIG-ZAG	QUAD	QUAD	QUAD
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	7.62 mm	7.62 mm	2.8 mm	7.25 mm	7.25 mm	7.25 mm

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