X BAND, 4.7pF, 60V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, GLASS PACKAGE-2
Parameter Name | Attribute value |
Maker | TE Connectivity |
package instruction | O-LALF-W2 |
Contacts | 2 |
Reach Compliance Code | unknown |
ECCN code | EAR99 |
Other features | LOW LEAKAGE |
Minimum breakdown voltage | 60 V |
Shell connection | ISOLATED |
Configuration | SINGLE |
Diode Capacitance Tolerance | 10% |
Minimum diode capacitance ratio | 7.2 |
Nominal diode capacitance | 4.7 pF |
Diode component materials | SILICON |
Diode type | VARIABLE CAPACITANCE DIODE |
frequency band | X BAND |
JESD-30 code | O-LALF-W2 |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 150 °C |
Minimum operating temperature | -65 °C |
Package body material | GLASS |
Package shape | ROUND |
Package form | LONG FORM |
Maximum power dissipation | 0.2 W |
Certification status | Not Qualified |
minimum quality factor | 1000 |
surface mount | NO |
Terminal form | WIRE |
Terminal location | AXIAL |
Varactor Diode Classification | ABRUPT |