IMH5A datasheet, PDF - EEWORLD Datasheet

IMH5A: DescriptionGeneral purpose (dual digital transistors); CategoryDiscrete semiconductor The transistor; File Size76KB，3 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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IMH5A Overview

General purpose (dual digital transistors)

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	ROHM Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code	compli
ECCN code	EAR99
Other features	DIGITAL, BUILT IN BIAS RESISTOR
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	50 V
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	56
JESD-30 code	R-PDSO-G6
JESD-609 code	e1
Number of components	2
Number of terminals	6
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	TIN SILVER COPPER
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON

	IMH5A	UMH5N_1	UMH5N
Description	General purpose (dual digital transistors)	General purpose (dual digital transistors)	General purpose (dual digital transistors)
Is it Rohs certified?	conform to	-	conform to
Maker	ROHM Semiconductor	-	ROHM Semiconductor
Reach Compliance Code	compli	-	compli
Maximum collector current (IC)	0.03 A	-	0.03 A
Minimum DC current gain (hFE)	56	-	56
JESD-609 code	e1	-	e2
Number of components	2	-	2
Polarity/channel type	NPN	-	NPN
surface mount	YES	-	YES
Terminal surface	TIN SILVER COPPER	-	Tin/Copper (Sn/Cu)
Transistor component materials	SILICON	-	SILICON

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