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J111-TA

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size63KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

J111-TA Overview

Transistor

J111-TA Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerVishay
package instruction,
Reach Compliance Codeunknown
FET technologyJUNCTION
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.4 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Si9428DY
Vishay Siliconix
N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
20
r
DS(on)
(W)
0.03 @ V
GS
= 4.5 V
0.04 @ V
GS
= 2.5 V
I
D
(A)
6
5.2
D
1
D
1
SO-8
S
S
S
G
1
2
3
4
Top View
S
1
Ordering Information: Si9428DY
Si9428DY-T1 (with Tape and Reel)
N-Channel MOSFET
8
7
6
5
D
D
D
D
G
1
ABSOLUTE MAXIMUM RATINGS (T
A
= 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
J
= 150_C)
a, b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a, b
Maximum Power Dissipation
a, b
Operating Junction and Storage Temperature Range
T
A
= 25_C
T
A
= 70_C
P
D
T
J
, T
stg
T
A
= 25_C
T
A
= 70_C
I
D
I
DM
I
S
Symbol
V
DS
V
GS
Limit
20
"8
6
4.8
20
1.7
2.5
1.6
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction to Ambient
a
Junction-to-Ambient
t
v10
sec
Steady State
R
thJA
70
Symbol
Typical
Maximum
50
Unit
_C/W
Notes
a. Surface Mounted on FR4 Board.
b. t
v10
sec.
Document Number: 70810
S-03950—Rev. C, 26-May-03
www.vishay.com
1

J111-TA Related Products

J111-TA SI9428DY-E3 SI9428DY-T1-E3 J113-TA
Description Transistor Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8 Transistor
Maker Vishay Vishay Vishay Vishay
Reach Compliance Code unknown unknown unknown unknown
FET technology JUNCTION METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR JUNCTION
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
surface mount NO YES YES NO
Is it Rohs certified? incompatible conform to - incompatible
JESD-609 code e0 e3 - e0
Maximum operating temperature 150 °C 150 °C - 150 °C
Maximum power dissipation(Abs) 0.4 W 2.5 W - 0.4 W
Terminal surface Tin/Lead (Sn/Pb) Matte Tin (Sn) - Tin/Lead (Sn/Pb)
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