KTA1042D-Y datasheet, PDF - EEWORLD Datasheet

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KTA1042D-Y: DescriptionPower Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3; CategoryDiscrete semiconductor The transistor; File Size394KB，2 Pages; ManufacturerKEC; Websitehttp://www.keccorp.com/

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KTA1042D-Y Overview

Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3

KTA1042D-Y Parametric

Parameter Name	Attribute value
Maker	KEC
package instruction	DPAK-3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	5 A
Collector-emitter maximum voltage	100 V
Configuration	SINGLE
Minimum DC current gain (hFE)	120
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Maximum power dissipation(Abs)	20 W
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz

KTA1042D-Y Related Products

	KTA1042D-Y	KTA1042D-Y-RTF/P	KTA1042D-O	KTA1042L-O	KTA1042L-Y
Description	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3	Rated power: 20W Collector current Ic: 5A Collector-emitter breakdown voltage Vce: 100V Transistor type: PNP PNP, 100V, 5A	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin, DPAK-3	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3	Power Bipolar Transistor, 5A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, IPAK-3
Maker	KEC	-	KEC	KEC	KEC
package instruction	DPAK-3	-	DPAK-3	IN-LINE, R-PSIP-T3	IN-LINE, R-PSIP-T3
Contacts	3	-	3	3	3
Reach Compliance Code	unknown	-	unknown	unknown	unknown
ECCN code	EAR99	-	EAR99	EAR99	EAR99
Maximum collector current (IC)	5 A	-	5 A	5 A	5 A
Collector-emitter maximum voltage	100 V	-	100 V	100 V	100 V
Configuration	SINGLE	-	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	120	-	70	70	120
JESD-30 code	R-PSSO-G2	-	R-PSSO-G2	R-PSIP-T3	R-PSIP-T3
Number of components	1	-	1	1	1
Number of terminals	2	-	2	3	3
Maximum operating temperature	150 °C	-	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	IN-LINE	IN-LINE
Polarity/channel type	PNP	-	PNP	PNP	PNP
Maximum power dissipation(Abs)	20 W	-	20 W	20 W	20 W
surface mount	YES	-	YES	NO	NO
Terminal form	GULL WING	-	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	-	SINGLE	SINGLE	SINGLE
Transistor component materials	SILICON	-	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	-	30 MHz	30 MHz	30 MHz

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