RF Small Signal Field-Effect Transistor, N-Channel
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Maker | Qorvo |
package instruction | , |
Reach Compliance Code | unknown |
Maximum operating temperature | 175 °C |
Polarity/channel type | N-CHANNEL |
Maximum power consumption environment | 3.6 W |
FPD1500-000SQ | FPD1500-000 | FPD1500-000S3 | FPD1500 | |
---|---|---|---|---|
Description | RF Small Signal Field-Effect Transistor, N-Channel | RF Small Signal Field-Effect Transistor, N-Channel | RF Small Signal Field-Effect Transistor, N-Channel | RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE |
Maker | Qorvo | Qorvo | Qorvo | Qorvo |
Reach Compliance Code | unknown | unknown | unknown | compliant |
Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Maximum power consumption environment | 3.6 W | 3.6 W | 3.6 W | 3.6 W |
Is it Rohs certified? | conform to | conform to | conform to | - |