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FPD1500-000S3

Description
RF Small Signal Field-Effect Transistor, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size237KB,4 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Environmental Compliance
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FPD1500-000S3 Overview

RF Small Signal Field-Effect Transistor, N-Channel

FPD1500-000S3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerQorvo
package instruction,
Reach Compliance Codeunknown
Maximum operating temperature175 °C
Polarity/channel typeN-CHANNEL
Maximum power consumption environment3.6 W

FPD1500-000S3 Related Products

FPD1500-000S3 FPD1500-000 FPD1500-000SQ FPD1500
Description RF Small Signal Field-Effect Transistor, N-Channel RF Small Signal Field-Effect Transistor, N-Channel RF Small Signal Field-Effect Transistor, N-Channel RF Power Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, High Electron Mobility FET, DIE
Maker Qorvo Qorvo Qorvo Qorvo
Reach Compliance Code unknown unknown unknown compliant
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power consumption environment 3.6 W 3.6 W 3.6 W 3.6 W
Is it Rohs certified? conform to conform to conform to -
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