BS62LV1029SI70 datasheet, PDF - EEWORLD Datasheet

BS62LV1029SI70: DescriptionStandard SRAM, 128KX8, 70ns, CMOS, PDSO32; Categorystorage storage; File Size425KB，10 Pages; ManufacturerBrilliance

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BS62LV1029SI70 Overview

Standard SRAM, 128KX8, 70ns, CMOS, PDSO32

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Brilliance
package instruction	SOP, SOP32,.56
Reach Compliance Code	unknown
Maximum access time	70 ns
I/O type	COMMON
JESD-30 code	R-PDSO-G32
JESD-609 code	e0
memory density	1048576 bit
Memory IC Type	STANDARD SRAM
memory width	8
Humidity sensitivity level	3
Number of terminals	32
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	SOP
Encapsulate equivalent code	SOP32,.56
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Maximum standby current	3e-7 A
Minimum standby current	1.5 V
Maximum slew rate	0.039 mA
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	1.27 mm
Terminal location	DUAL

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