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NXP Semiconductors
Product data sheet
NPN switching transistor
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 12 V).
APPLICATIONS
•
High speed saturated switching applications, especially
in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
1
handbook, halfpage
BSV52
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
3
3
MARKING
TYPE NUMBER
BSV52
Note
1. * = p : Made in Hong Kong.
* = t : Made in Malaysia.
* = W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
BSV52
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
VERSION
SOT23
Fig.1 Simplified outline (SOT23) and symbol.
MARKING CODE
(1)
B2*
Top view
1
2
MAM255
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
20
12
5
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2004 Jan 14
2
NXP Semiconductors
Product data sheet
NPN switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 20 V
I
E
= 0; V
CB
= 20 V; T
j
= 125
°C
I
C
= 0; V
EB
= 4 V
V
CE
= 1 V
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 300
µA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
V
BEsat
C
c
C
e
f
T
t
on
t
d
t
r
t
off
t
s
t
f
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 1 V; f = 1 MHz
I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz
I
Con
= 10 mA; I
Bon
= 3 mA;
I
Boff
=
−1.5
mA
25
40
25
−
−
−
700
−
−
−
400
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
500
−
−
−
−
−
−
−
MIN.
−
−
−
TYP.
−
−
−
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
500
BSV52
UNIT
K/W
MAX. UNIT
400
30
100
nA
µA
nA
120
−
300
250
400
850
1. 2
4
4.5
−
mV
mV
mV
mV
V
pF
pF
MHz
Switching times (between 10% and 90% levels);
(see Fig.2)
turn-on time
delay time
rise time
turn-off time
storage time
fall time
10
4
6
20
10
10
ns
ns
ns
ns
ns
ns
2004 Jan 14
3