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MS8250-P2920

Description
GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size99KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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MS8250-P2920 Overview

GALLIUM ARSENIDE, mm WAVE BAND, MIXER DIODE

GaAs Schottky Diodes
TM
®
Flip Chip Anti Parallel Low R
S
MS8250 – P2920
Dimensions
Size: 26 x 13 mils
Thickness: 5 mils
Bond Pad Size: 5 x 8 mils
Features
Capacitance (65 fF Typ.)
Low Series Resistance (3
Typ.)
Cut-Off Frequency > 500 GHz
Large Gold Bond Pads
Description
The MS8250 is a GaAs flip chip anti-parallel pair
Schottky device designed for use as harmonic mixer
elements at microwave and millimeter wave
frequencies. Their high cut-off frequency insures good
performance at frequencies to 100 GHz. Applications
include: transceivers, digital radios and automotive
radar detectors.
These flip chip devices incorporate Microsemi’s
expertise in GaAs material processing, silicon nitride
protective coatings and high temperature metallization.
They have large, 5 x 8 mil, bond pads for ease of
insertion. The MS8250 is priced for high volume
commercial and industrial applications.
Specifications @ 25°C
(Per Junction)
V
F
(1 mA): 650–750 mV
V
F
(1 mA): 10 mV Max.
R
S
(10 mA): 7
Max.
I
R
(3 V): 10
A
Max.
C
T
(0 V): 80 fF Max.
Maximum Ratings
Insertion Temperature
Incident Power
Forward Current
Reverse Voltage
Operating Temperature
Storage Temperature
250°C for 10 Seconds
+20 dBm @ 25°C
15 mA @ 25°C
3V
-55°C to +125°C
-65°C to +150°C
Microsemi
Copyright
2008
Rev: 2008-12-29
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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