GMV1542-GM1 datasheet, PDF - EEWORLD Datasheet

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GMV1542-GM1: DescriptionC BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE; CategoryDiscrete semiconductor diode; File Size122KB，3 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com; Environmental Compliance

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GMV1542-GM1 Overview

C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE

GMV1542-GM1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Microsemi
package instruction	R-PDSO-N2
Contacts	2
Reach Compliance Code	compli
ECCN code	EAR99
Other features	LOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage	30 V
Configuration	SINGLE
Minimum diode capacitance ratio	3.4
Nominal diode capacitance	2.4 pF
Diode component materials	SILICON
Diode type	VARIABLE CAPACITANCE DIODE
frequency band	C BAND
JESD-30 code	R-PDSO-N2
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Certification status	Not Qualified
minimum quality factor	3800
Maximum repetitive peak reverse voltage	30 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
Varactor Diode Classification	ABRUPT

GMV1542-GM1 Related Products

	GMV1542-GM1	GMV1000	GMV1981-GM1	GMV2114-GM1	GMV2100	GMV2154-GM1	GMV5000	GMV2134-GM1	GMV5007-GM1
Description	C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	C BAND, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
Is it Rohs certified?	conform to	-	conform to	conform to	-	conform to	-	conform to	conform to
Maker	Microsemi	-	Microsemi	Microsemi	-	Microsemi	-	Microsemi	Microsemi
package instruction	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2	-	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2
Contacts	2	-	2	2	-	2	-	2	2
Reach Compliance Code	compli	-	compli	compli	-	compli	-	compli	compli
ECCN code	EAR99	-	EAR99	EAR99	-	EAR99	-	EAR99	EAR99
Other features	LOW INDUCTANCE, LOW NOISE	-	LOW INDUCTANCE, LOW NOISE	LOW INDUCTANCE, LOW NOISE	-	LOW INDUCTANCE, LOW NOISE	-	LOW INDUCTANCE, LOW NOISE	LOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage	30 V	-	12 V	22 V	-	22 V	-	22 V	22 V
Configuration	SINGLE	-	SINGLE	SINGLE	-	SINGLE	-	SINGLE	SINGLE
Minimum diode capacitance ratio	3.4	-	-	3.3	-	4.1	-	3.7	13
Nominal diode capacitance	2.4 pF	-	0.25 pF	2.1 pF	-	14 pF	-	4.9 pF	2.5 pF
Diode component materials	SILICON	-	SILICON	SILICON	-	SILICON	-	SILICON	SILICON
Diode type	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	-	VARIABLE CAPACITANCE DIODE	VARIABLE CAPACITANCE DIODE
frequency band	C BAND	-	C BAND	C BAND	-	C BAND	-	C BAND	C BAND
JESD-30 code	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2	-	R-PDSO-N2	-	R-PDSO-N2	R-PDSO-N2
Number of components	1	-	1	1	-	1	-	1	1
Number of terminals	2	-	2	2	-	2	-	2	2
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE	-	SMALL OUTLINE	-	SMALL OUTLINE	SMALL OUTLINE
Certification status	Not Qualified	-	Not Qualified	Not Qualified	-	Not Qualified	-	Not Qualified	Not Qualified
minimum quality factor	3800	-	1200	900	-	600	-	750	1200
Maximum repetitive peak reverse voltage	30 V	-	12 V	22 V	-	22 V	-	22 V	22 V
surface mount	YES	-	YES	YES	-	YES	-	YES	YES
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	-	NO LEAD	-	NO LEAD	NO LEAD
Terminal location	DUAL	-	DUAL	DUAL	-	DUAL	-	DUAL	DUAL

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