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GMV1981-GM1

Description
C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE
CategoryDiscrete semiconductor    diode   
File Size122KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Environmental Compliance
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GMV1981-GM1 Overview

C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE

GMV1981-GM1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrosemi
package instructionR-PDSO-N2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresLOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage12 V
ConfigurationSINGLE
Nominal diode capacitance0.25 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandC BAND
JESD-30 codeR-PDSO-N2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
minimum quality factor1200
Maximum repetitive peak reverse voltage12 V
surface mountYES
Terminal formNO LEAD
Terminal locationDUAL

GMV1981-GM1 Related Products

GMV1981-GM1 GMV1000 GMV1542-GM1 GMV2114-GM1 GMV2100 GMV2154-GM1 GMV5000 GMV2134-GM1 GMV5007-GM1
Description C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 30 V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 0.25 pF, 12 V, SILICON, VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE C BAND, 22 V, SILICON, VARIABLE CAPACITANCE DIODE
Is it Rohs certified? conform to - conform to conform to - conform to - conform to conform to
Maker Microsemi - Microsemi Microsemi - Microsemi - Microsemi Microsemi
package instruction R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2 - R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2
Contacts 2 - 2 2 - 2 - 2 2
Reach Compliance Code compli - compli compli - compli - compli compli
ECCN code EAR99 - EAR99 EAR99 - EAR99 - EAR99 EAR99
Other features LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE - LOW INDUCTANCE, LOW NOISE LOW INDUCTANCE, LOW NOISE
Minimum breakdown voltage 12 V - 30 V 22 V - 22 V - 22 V 22 V
Configuration SINGLE - SINGLE SINGLE - SINGLE - SINGLE SINGLE
Nominal diode capacitance 0.25 pF - 2.4 pF 2.1 pF - 14 pF - 4.9 pF 2.5 pF
Diode component materials SILICON - SILICON SILICON - SILICON - SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE - VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band C BAND - C BAND C BAND - C BAND - C BAND C BAND
JESD-30 code R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2 - R-PDSO-N2 - R-PDSO-N2 R-PDSO-N2
Number of components 1 - 1 1 - 1 - 1 1
Number of terminals 2 - 2 2 - 2 - 2 2
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR - RECTANGULAR RECTANGULAR - RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Certification status Not Qualified - Not Qualified Not Qualified - Not Qualified - Not Qualified Not Qualified
minimum quality factor 1200 - 3800 900 - 600 - 750 1200
Maximum repetitive peak reverse voltage 12 V - 30 V 22 V - 22 V - 22 V 22 V
surface mount YES - YES YES - YES - YES YES
Terminal form NO LEAD - NO LEAD NO LEAD - NO LEAD - NO LEAD NO LEAD
Terminal location DUAL - DUAL DUAL - DUAL - DUAL DUAL
Minimum diode capacitance ratio - - 3.4 3.3 - 4.1 - 3.7 13
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