OPB706A datasheet, PDF - EEWORLD Datasheet

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OPB706A: DescriptionDiffuse Photoelectric Sensor, 1.27mm Min, 3.81mm Max, 1-Channel, Rectangular, Through Hole Mount; CategoryThe sensor Sensor/transducer; File Size116KB，1 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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OPB706A Overview

Diffuse Photoelectric Sensor, 1.27mm Min, 3.81mm Max, 1-Channel, Rectangular, Through Hole Mount

OPB706A Parametric

Parameter Name	Attribute value
Maker	Fairchild
Reach Compliance Code	unknown
Samacsys Description	Optical Switches, Reflective, Phototransistor Output
Other features	30V VCE
body width	6.1 mm
body height	4.65 mm
Body length or diameter	4.39 mm
gap size	1.27 mm
Maximum measuring range (mm)	3.81 mm
Minimum measuring range (mm)	1.27 mm
Installation features	THROUGH HOLE MOUNT
Number of channels	1
Maximum working current	20 mA
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Output circuit type	Transistor
Maximum output voltage	30 V
Package Shape/Form	RECTANGULAR
Response time	12 µs
Sensor/Transducer Type	LINEAR POSITION SENSOR,PHOTOELECTRIC,DIFFUSE
surface mount	NO
Termination type	SOLDER
VCEsat-Max	0.4 V

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Fairchild

Semiconductor

Infrared Emitting Diodes, Switches, and Sensors

Infrared Emitting Diodes (continued)

Mfr.Õs

Type

F5F1

F5G1

LED55B

LED55C

LED56

LED56F

QEB421

QEC113

QEC122

QED123

QED222

QED233

QED234

QED522

QED523

QEE113

QEE122

QEE123

Fig.

C

A

B

D

E

F

G

H

Power Out

Min.

0.280 mW/sr

0.600 mW/sr

5.400 mW

1.500 mW

4.000 mW/sr

14.000 mW/sr

27.000 mW/sr

80.000 mW/sr

50.000 mW/sr

10.000 mW/sr

27.000 mW/sr

20.000 mW/sr

40.000 mW/sr

3.000 mW/sr

4.000 mW/sr

8.000 mW/sr

V

F

Max.

1.7

1.8

1.5

1.7

1.5

1.7

1.5

1.7

1.5

Peak Emission

Wavelength (nm)

940

880

940

880

940

880

940

880

940

880

Beam Angle

1

/

2

Angle (¡)

±35

±10

±40

±60

±8

±9

±20

±15

±25

Infrared Emitting Diodes, Switches, and Sensors

Slotted Optical Switches

Mfr.Õs

Type

OPB804

H21A1

H22A1

H21B1

H22B1

H21LTI

H22LTI

MOC70P1

QVE00118

QVE00039

QVE00112

Fig.

I

J

K

J

K

L

M

N

O

P

Q

Output

Type

Transistor

Darlington

Optologic

Transistor

Optologic

Min. Output

I

C

@ I

F

(mA)

0.5 @ 20 mA

1.0 @ 20 mA

7.5 @ 10 mA

Inverter Ñ O/C

1.0 @ 20 mA

0.5 @ 20 mA

Inverter Ñ O/C

Gap Width

(In.)

0.150

0.124

0.200

0.196

0.094

0.118

Lead Spacing

(In.)

0.300

0.284

0.380

0.354

Wires

Slotted Optical Switches with Internal Dust Covers

9

OPB860N55

OPB862N55

OPB865N55

OPB867N55

OPB860T55

OPB862T55

OPB865T55

OPB867T55

R

S

Transistor

0.5 @ 20 mA

1.8 @ 20 mA

0.5 @ 20 mA

1.8 @ 20 mA

0.5 @ 20 mA

1.8 @ 20 mA

0.5 @ 20 mA

1.8 @ 20 mA

0.125

0.32

0.22

0.32

0.22

Reflective Object Switches with Internal Dust Covers

Mfr.Õs

Type

OPB703

OPB703W

OPB706A

Fig.

T

U

V

Output

Type

Transistor

Min. Output

I

C

@ I

F

(mA)

0.20 @ 40 mA

0.50 @ 20 mA

Optimum Response

Dist. (In.)

0.150

0.050

Lead Spacing

(In.)

Ñ

Wires

0.100/0.083

Infrared Photodetectors

Mfr.Õs

Type

L14C1

L14C2

L14F1

L14G1

L14G2

L14N1

L14N2

L14P1

L14P2

L14Q1

L14R1

QSB320

QSC112

QSC113

QSC114

QSC133

QSD122

QSD123

QSD124

QSD722

QSD724

QSD733

QSE113

QSE122

QSE133

QSE156

QSE157

QSE158

QSE159

QSE773

Fig.

W

X

W

X

C

Y

E

F

Z

H

AA

BB

Output

Type

Transistor

Darlington

Transistor

Darlington

Transistor

Darlington

Transistor

Darlington

Transistor

Darlington

Optologic

PIN Photodiode

I

C

Min.

(mA)

1.00

0.50

3.00

6.00

3.00

6.00

4.00

8.00

1.00

5.00

4.00

1.00

2.40

4.00

8.00

1.00

4.00

6.00

0.60

3.50

5.00

0.25

3.00

9.00

Buffer Ñ T/P

Inverter Ñ T/P

Buffer Ñ O/C

Inverter Ñ O/C

0.03

BV ceo

(Volts)

50

25

45

30

V

CC

Ñ 4.5-16

V

CC

Ñ 4.5-16

V

CC

Ñ 4.5-16

V

CC

Ñ 4.5-16

32

Reception Angle

1

/

2

Angle (¡)

±40

±10

±40

±10

±35

±60

±8

±12

±20

±25

±10

±60

Infrared Emitting Diodes

Mfr.Õs

Type

1N6264

1N6265

1N6266

F5D1

F5D2

F5D3

F5E1

F5E2

F5E3

Fig.

A

B

A

B

Power Out

Min.

6.000 mW

25.000 mW/sr

12.000 mW

9.000 mW

10.500 mW

12.000 mW

9.000 mW

10.500 mW

V

F

Max.

1.7

Peak Emission

Wavelength (nm)

940

880

Beam Angle

1

/

2

Angle (¡)

±10

±40

±10

±40

Infrared Matched Emitter-Sensor Pairs

Mfr.Õs

Type

H23A1

H23LTB

H23LTI

H23LOB

QPC1213

QPD1223

QPD5223

QPE1113

QPE1259

Fig.

C

E/B

E

F

G/U

H

H/V

I

C

Min.

(mA)

1.5

Optologic Ñ Buffer T/P

Optologic Ñ Inverter O/C

Optologic Ñ Buffer O/C

5.0

10.0

7.5

0.3

Optologic Ñ Inverter O/C

Tip-Tip

Separation (In.)

0.155

0.250

550

b

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