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M29DW324DB90N6E

Description
Flash, 2MX16, 90ns, PDSO48
Categorystorage    storage   
File Size1MB,50 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

M29DW324DB90N6E Overview

Flash, 2MX16, 90ns, PDSO48

M29DW324DB90N6E Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicron Technology
package instructionTSSOP, TSSOP48,.8,20
Reach Compliance Codecompliant
Maximum access time90 ns
Spare memory width8
startup blockBOTTOM
command user interfaceYES
Universal Flash InterfaceYES
Data pollingYES
JESD-30 codeR-PDSO-G48
memory density33554432 bit
Memory IC TypeFLASH
memory width16
Number of departments/size8,63
Number of terminals48
word count2097152 words
character code2000000
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize2MX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSSOP
Encapsulate equivalent codeTSSOP48,.8,20
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE, SHRINK PITCH
Parallel/SerialPARALLEL
power supply3/3.3 V
Certification statusNot Qualified
ready/busyYES
Department size8K,64K
Maximum standby current0.0001 A
Maximum slew rate0.02 mA
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formGULL WING
Terminal pitch0.5 mm
Terminal locationDUAL
switch bitYES
typeNOR TYPE
M29DW324DT
M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
SUPPLY VOLTAGE
– V
CC
= 2.7V to 3.6V for Program, Erase
and Read
– V
PP
=12V for Fast Program (optional)
ACCESS TIME: 70, 90ns
PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
MEMORY BLOCKS
– Dual Bank Memory Array: 16Mbit+16Mbit
– Parameter Blocks (Top or Bottom
Location)
DUAL OPERATIONS
– Read in one bank while Program or Erase
in other
ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
V
PP
/WP PIN for FAST PROGRAM and
WRITE PROTECT
TEMPORARY BLOCK UNPROTECTION
MODE
COMMON FLASH INTERFACE
– 64 bit Security Code
EXTENDED MEMORY BLOCK
– Extra block used as security block or to
store additional information
LOW POWER CONSUMPTION
– Standby and Automatic Standby
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW324DT: 225Ch
– Bottom Device Code M29DW324DB:
225Dh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZE)
6 x 8mm
March 2008
1/50

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