APTGT750U60D4G
Single switch
Trench + Field Stop IGBT3
Power Module
1
V
CES
= 600V
I
C
= 750A @ Tc = 80°C
Application
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Features
Trench + Field Stop IGBT3 Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- RBSOA and SCSOA rated
Kelvin emitter for easy drive
M6 connectors for power
M4 connectors for signal
High level of integration
3
5
2
Benefits
Stable temperature behavior
Very rugged
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Easy paralleling due to positive T
C
of V
CEsat
RoHS Compliant
Absolute maximum ratings
Symbol
V
CES
I
C
I
CM
V
GE
P
D
RBSOA
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Safe Operating Area
T
C
= 25°C
T
C
= 80°C
T
C
= 25°C
T
C
= 25°C
T
j
= 125°C
Max ratings
600
1000
750
1000
±20
2300
1600A@550V
Unit
V
APTGT750U60D4G – Rev 1 October 2012
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
See application note APT0502 on www.microsemi.com
www.microsemi.com
1-6
APTGT750U60D4G
All ratings @ T
j
= 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
I
CES
V
CE(sat)
V
GE(th)
I
GES
Zero Gate Voltage Collector Current
Collector Emitter saturation Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Test Conditions
V
GE
= 0V, V
CE
= 600V
T
j
= 25°C
V
GE
= 15V
I
C
= 800A
T
j
= 125°C
V
GE
= V
CE
, I
C
= 13mA
V
GE
= 20V, V
CE
= 0V
Min
Typ
1.5
1.7
5.8
Max
1
1.9
6.5
3100
Unit
mA
V
V
nA
5.0
Dynamic Characteristics
Symbol
C
ies
C
oes
C
res
Q
G
T
d(on)
T
r
T
d(off)
T
f
T
d(on)
T
r
T
d(off)
T
f
E
on
E
off
I
sc
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Short Circuit data
Test Conditions
V
GE
= 0V
V
CE
= 25V
f = 1MHz
V
GE
=-8/+15V, I
C
=800A
V
CE
=300V
Inductive Switching (25°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 800A
R
G
= 2
Inductive Switching (150°C)
V
GE
= ±15V
V
Bus
= 300V
I
C
= 800A
R
G
= 2
V
GE
= ±15V
T
j
= 150°C
V
Bus
= 300V
I
C
= 800A
T
j
= 150°C
R
G
= 2
V
GE
≤15V
; V
Bus
= 360V
t
p
= 6µs ; T
j
= 150°C
Min
Typ
49
3.1
1.5
5.8
250
70
550
70
270
80
650
80
10
mJ
40
4000
A
Max
Unit
nF
µC
ns
ns
Reverse diode ratings and characteristics
Symbol Characteristic
V
RRM
Maximum Peak Repetitive Reverse Voltage
I
RRM
I
F
V
F
t
rr
Q
rr
E
rr
Maximum Reverse Leakage Current
DC Forward Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Energy
I
F
= 800A
V
R
= 300V
I
F
= 800A
V
GE
= 0V
Test Conditions
V
R
=600V
T
j
= 25°C
T
j
= 150°C
Tc = 80°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
T
j
= 25°C
T
j
= 150°C
Min
600
Typ
Max
750
1000
800
1.6
1.5
150
250
36
76
9.2
19
2.1
Unit
V
µA
A
V
ns
µC
mJ
APTGT750U60D4G – Rev 1 October 2012
di/dt =5000A/µs
www.microsemi.com
2-6
APTGT750U60D4G
Thermal and package characteristics
Symbol Characteristic
R
thJC
V
ISOL
T
J
T
STG
T
C
Torque
Wt
Junction to Case Thermal Resistance
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Min
IGBT
Diode
4000
-40
-40
-40
3
1
Typ
Max
0.065
0.11
175
125
125
5
2
350
Unit
°C/W
V
°C
N.m
g
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
M6
M4
D4 Package outline
(dimensions in mm)
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3-6
APTGT750U60D4G – Rev 1 October 2012
APTGT750U60D4G
Typical Performance Curve
Output Characteristics (V
GE
=15V)
Output Characteristics
1600
T
J
= 150°C
V
GE
=19V
1600
T
J
=25°C
1200
I
C
(A)
I
C
(A)
T
J
=150°C
1200
V
GE
=13V
V
GE
=15V
800
800
400
T
J
=25°C
400
V
GE
=9V
0
0
0.5
1
0
1.5
V
CE
(V)
2
2.5
3
0
0.5
1
1.5
2
V
CE
(V)
2.5
3
3.5
1600
Transfert Characteristics
60
T
J
=25°C
Energy losses vs Collector Current
V
CE
= 300V
V
GE
= 15V
R
G
= 2Ω
T
J
= 150°C
Eoff
1200
40
800
T
J
=125°C
E (mJ)
I
C
(A)
Err
20
Eon
T
J
=25°C
400
T
J
=150°C
0
5
6
7
8
9
10
11
12
V
GE
(V)
Switching Energy Losses vs Gate Resistance
120
100
80
E (mJ)
60
40
20
0
0
2.5
5
7.5
10
Gate Resistance (ohms)
12.5
Eon
Err
V
CE
= 300V
V
GE
=15V
I
C
= 800A
T
J
= 150°C
Eoff
0
0
200
400
600
I
C
(A)
Reverse Bias Safe Operating Area
2000
800
1000 1200
Eon
1600
I
F
(A)
1200
800
400
0
0
100 200 300 400 500 600 700
V
CE
(V)
V
GE
=15V
T
J
=150°C
R
G
=2Ω
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.08
Thermal Impedance (°C/W)
IGBT
0.7
0.04
0.5
0.3
0.02
0.1
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration in Seconds
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4-6
APTGT750U60D4G – Rev 1 October 2012
0.06
0.9
APTGT750U60D4G
Operating Frequency vs Collector Current
Fmax, Operating Frequency (kHz)
50
40
30
20
10
0
200
Hard
switching
ZVS
ZCS
V
CE
=300V
D=50%
R
G
=2Ω
T
J
=150°C
Forward Characteristic of diode
1200
1000
800
I
F
(A)
600
400
200
0
T
J
=25°C
T
c
=85°C
T
J
=150°C
400
600
I
C
(A)
800
1000
0
0.4
0.8
1.2
1.6
V
F
(V)
2
2.4
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.12
Thermal Impedance (°C/W)
0.1
0.08
0.06
0.04
0.02
0.9
0.7
0.5
0.3
0.1
Single Pulse
0.0001
0.001
0.01
0.1
1
10
Diode
0.05
0
0.00001
Rectangular Pulse Duration in Seconds
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5-6
APTGT750U60D4G – Rev 1 October 2012
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