APT30DL60B(G)
APT30DL60S(G)
600V 30A
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Ultrasoft Recovery Rectifier Diode
(B)
TO
- 24
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Applications
- Induction Heating
• Resonant Mode Circuits
-ZVS and ZCS Topologies
- Phase Shifted Bridge
PRODUCT FEATURES
• Ultrasoft Recovery Times (trr)
• Popular TO-247 Package or
Surface Mount D
3
PAK Package
• Ultra Low Forward Voltage
• Low Leakage Current
PRODUCT BENEFITS
• Soft Switching - High Qrr
• Low Noise Switching
- Reduced Ringing
• Higher Reliability Systems
• Minimizes or eliminates
snubber
1
2
7
D
3
PAK
1
2
(S)
1
2
1 - Cathode
2 - Anode
Back of Case - Cathode
MAXIMUM RATINGS
Symbol
V
R
V
RRM
V
RWM
I
F(AV)
I
F(RMS)
I
FSM
T
J
, T
STG
T
L
All Ratings : T
C
= 25°C unless otherwise specified.
Ratings
Unit
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward current (T
C
= 126°C, Duty Cycle = 0.5)
RMS Forward Currrent (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
J
= 45°C, 8.3 ms)
Operating and Storage Junction Temperature Range
Lead Temperature for 10 Seconds
600
Volts
30
51
110
-55 to 175
°C
300
Amps
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Characteristic / Test Conditions
I
F
= 30A
V
F
Forward Voltage
I
F
= 60A
I
F
= 30A, T
J
= 125°C
I
RM
C
T
Maximum Reverse Leakage Current
Junction Capacitance, V
R
= 200V
V
R
= 600V
V
R
= 600V, T
J
= 125°C
31
Min
Typ
1.25
2.03
1.9
Max
1.6
Unit
Volts
25
250
pF
052-6313 Rev B 6 - 2009
μA
Microsemi Website - http://www.microsemi.com
DYNAMIC CHARACTERISTICS
Symbol
t
rr
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
t
rr
Q
rr
I
RRM
APT30DL60B_S(G)
Min
Typ
64
ns
317
I
F
= 30A, di
F
/dt = -200A/μs
V
R
= 400V, T
C
= 25°C
962
7
561
I
F
= 30A, di
F
/dt = -200A/μs
V
R
= 400V, T
C
= 125°C
2244
9
264
I
F
= 30A, di
F
/dt = -1000A/μs
V
R
= 400V, T
C
= 125°C
3191
26
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic / Test Conditions
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
I
F
= 1A, di
F
/dt = -100A/μs, V
R
= 30V, T
J
= 25°C
Max
Unit
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
R
θJC
W
T
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
Min
Typ
Max
.88
Unit
°C/W
oz
g
0.22
Package Weight
5.9
10
Torque
Maximum Mounting Torque
1.1
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
lb·in
N·m
0.9
Z
θ
JC
, THERMAL IMPEDANCE (°C/W)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
-5
10
-4
10
-3
10
-2
Note:
PDM
t1
t2
Duty Factor D =
1
/
t2
Peak TJ = PDM x Z
θJC
+ TC
t
10
-1
1.0
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6313 Rev B 6 - 2009
TYPICAL PERFORMANCE CURVES
100
90
80
I
F
, FORWARD CURRENT (A)
70
60
50
40
30
20
10
0
0
800
T
J
= 125°C
t
rr
, COLLECTOR CURRENT (A)
T
J
= 150°C
T
J
= 55°C
700
600
500
400
300
200
100
0
15A
60A
30A
APT30DL60B_S(G)
T = 125°C
J
V = 400V
R
T
J
= 25°C
Q
rr
, REVERSE RECOVERY CHARGE
(nC)
I
RRM
, REVERSE RECOVERY CURRENT
(A)
0.5
1.0
1.5
2.0
2.5 3.0
V
F
, ANODE-TO-CATHODE VOLTAGE (V)
FIGURE 2, Forward Current vs. Forward Voltage
4500
T = 125°C
60A
J
V = 400V
R
4000
3500
3000
2500
2000
1500
1000
500
15A
30A
0
200
400
600
800
1000
-di
F
/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
32
28
24
20
16
12
8
4
0
T = 125°C
J
V = 400V
R
60A
30A
15A
0
200
400
600
800
1000
-di
F
/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
1.2
1
0.8
0.6
0.4
0.2
0
I
RRM
0
0
200
400
600
800
1000
-di
F
/dt, CURRENT RATE OF CHANGE (A/μs)
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
70
60
50
I
F(AV)
(A)
40
30
20
10
0
Duty cycle = 0.5
T
J
= 126°C
K
f
, DYNAMIC PARAMETERS
(Normalized to 1000A/μs)
t
RR
Q
RR
0
25
50
75
100
125
150
25
50
75
100
125
150
175
T
J
, JUNCTION TEMPERATURE (°C)
FIGURE 6, Dynamic Parameters vs Junction Temperature
300
C
J
, JUNCTION CAPACITANCE (pF)
250
200
150
100
50
0
Case Temperature (°C)
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
10
100
400
V
R
, REVERSE VOLTAGE (V)
FIGURE 8, Junction Capacitance vs. Reverse Voltage
1
052-6313 Rev B 6 - 2009
Vr
+18V
0V
D.U.T.
di
F
/dt Adjust
APT30DL60B_S(G)
trr/Qrr
Waveform
CURRENT
TRANSFORMER
Figure 9. Diode Test Circuit
1
2
3
4
I
F
- Forward Conduction Current
di
F
/dt - Rate of Diode Current Change Through Zero Crossing.
I
RRM
- Maximum Reverse Recovery Current.
Zero
1
4
6
5
3
2
0.25 IRRM
Slope = di
M
/dt
trr - Reverse
Recovery
Time, measured from zero crossing where diode
current goes from positive to negative, to the point at which the straight
line through I
RRM
and 0.25 I
RRM
passes through zero.
Qrr - Area Under the Curve Defined by I
RRM
and trr.
di
M
/dt - Maximum Rate of Current Increase During the Trailing Portion of trr.
5
6
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
6.15 (.242) BSC
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
D PAK Package Outline
e1 100% Sn
4.90 (.193)
5.10 (.201)
1.45 (.057)
1.60 (.063)
15.85 (.624)
16.05(.632)
13.30 (.524)
13.60(.535)
3
Cathode
(Heat Sink)
1.00 (.039)
1.15(.045)
Cathode
20.80 (.819)
21.46 (.845)
3.50 (.138)
3.81 (.150)
18.70 (.736)
19.10 (.752)
12.40 (.488)
12.70 (.500)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.40 (.016)
0.65 (.026)
0.020 (.001)
0.250 (.010)
2.70 (.106)
2.90 (.114)
19.81 (.780)
20.32 (.800)
1.15 (.045)
1.45 (.057)
1.20 (.047)
1.90 (.075) 1.40 (.055)
2.10 (.083)
5.45 (.215) BSC
(2 Plcs.)
2.40 (.094)
2.70 (.106)
(Base of Lead)
052-6313 Rev B 6 - 2009
Anode
2.21 (.087)
2.59 (.102)
Heat Sink (Cathode)
and Leads
are Plated
Cathode
10.90 (.430) BSC
Dimensions in Millimeters and (Inches)
Anode
Cathode
Dimensions in Millimeters (Inches)
Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583
4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. US and Foreign patents pending. All Rights Reserved.