IDT7MB4048S55P datasheet, PDF - EEWORLD Datasheet

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IDT7MB4048S55P: DescriptionSRAM Module, 512KX8, 55ns, CMOS; Categorystorage storage; File Size234KB，10 Pages; ManufacturerIDT (Integrated Device Technology)

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IDT7MB4048S55P Overview

SRAM Module, 512KX8, 55ns, CMOS

IDT7MB4048S55P Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	IDT (Integrated Device Technology)
Reach Compliance Code	not_compliant
ECCN code	3A991.B.2.A
Maximum access time	55 ns
I/O type	COMMON
JESD-30 code	R-XDMA-T32
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	SRAM MODULE
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	32
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	512KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	UNSPECIFIED
encapsulated code	DIP
Encapsulate equivalent code	DIP32,.6
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum standby current	0.17 A
Minimum standby current	4.5 V
Maximum slew rate	0.48 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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IDT7MB4048S55P Related Products

	IDT7MB4048S55P	IDT7MB4048S45P	IDT7M4048L70N	IDT7M4048L120N	IDT7MB4048S20P	IDT7M4048L85N	IDT7M4048S55N	IDT7M4048L100N
Description	SRAM Module, 512KX8, 55ns, CMOS	SRAM Module, 512KX8, 45ns, CMOS	SRAM Module, 512KX8, 70ns, CMOS	SRAM Module, 512KX8, 120ns, CMOS	SRAM Module, 512KX8, 20ns, CMOS	SRAM Module, 512KX8, 85ns, CMOS	SRAM Module, 512KX8, 55ns, CMOS	SRAM Module, 512KX8, 100ns, CMOS
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
Maximum access time	55 ns	45 ns	70 ns	120 ns	20 ns	85 ns	55 ns	100 ns
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32	R-XDMA-T32
JESD-609 code	e0	e0	e0	e0	e0	e0	e0	e0
memory density	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
Memory IC Type	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE	SRAM MODULE
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of ports	1	1	1	1	1	1	1	1
Number of terminals	32	32	32	32	32	32	32	32
word count	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
character code	512000	512000	512000	512000	512000	512000	512000	512000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Exportable	YES	YES	YES	YES	YES	YES	YES	YES
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
encapsulated code	DIP	DIP	DIP	DIP	DIP	DIP	DIP	DIP
Encapsulate equivalent code	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6	DIP32,.6
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY	MICROELECTRONIC ASSEMBLY
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	225	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	225
power supply	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum standby current	0.17 A	0.17 A	0.00025 A	0.00025 A	0.17 A	0.00025 A	0.012 A	0.00025 A
Minimum standby current	4.5 V	4.5 V	2 V	2 V	4.5 V	2 V	4.5 V	2 V
Maximum slew rate	0.48 mA	0.48 mA	0.11 mA	0.11 mA	0.48 mA	0.11 mA	0.15 mA	0.11 mA
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal pitch	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm	2.54 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	30	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	30
Maker	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	IDT (Integrated Device Technology)	-
Is it lead-free?	-	-	Contains lead	Contains lead	-	Contains lead	Contains lead	Contains lead

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