Light Emitting Diode(InGaN)
KLB-520 G
DIMENSIONS
KLB-520 G is a high bright InGaN Green LED,
and has the optimized optical characteristics.
Unit : [mm]
Features
• Transparent epoxy lens
• High Optical Output
Applications
• Display
• Indicator
• Signage
• Camera
Maximum Ratings
Parameter
Reverse voltage
Forward current
Pulse forward current
*1
Power dissipation
Operating temperature
Storage temperature
Soldering Temperature
*2
*2. Soldering time
≤
5 Sec
[ Ta=25°C ]
Symbol
V
R
I
F
I
FP
P
D
T
opr.
T
stg.
T
sol.
Ratings
5
30
0.5
105
-30 ~ +85
-40 ~ +100
260
Unit
V
mA
A
mW
°C
°C
°C
*1. I
FP
Measured under duty
≤
1/10 @ 1KHz
Keep the distance more than 3mm from soldering foundation.
Electro-Optical Characteristics
Parameter
Forward voltage
Reverse current
Luminous Intensity
Peak emission wavelength
Doninant Wave Length
Spectral half bandwidth
Half angle
[ Ta=25°C ]
Symbol
V
F
I
R
Iv
λ
P
λ
d
∆λ
2∆Θ
1/2
Conditions
I
F
= 20 mA
V
R
= 5 V
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
I
F
= 20 mA
Min
-
-
15
-
520
-
-
Typ
3.2
-
20
520
-
15
8
Max
3.5
50
-
-
530
-
-
Unit
V
uA
cd
nm
nm
nm
deg.
1/2
Light Emitting Diode(InGaN)
KLB-520 G
Forward current vs.
Ambient temperature
50
40
30
20
10
0
Relative intensity
Radiant Intensity vs.
Forward current
2.0
Forward current I
F
[mA]
1.0
0.5
0
20
40
60
80
100
0
0
1
3
5 10 15 20 25 30
Ambient temperature T
a
[℃]
Forward current I
F
[mA]
Relative radiant intensity vs.
Ambient temperature
Relative radiant intensity P
O
Relative intensity vs.
Wavelength
1.2
1
10
Intensity [arb.]
0
20
40
60
80
100
Ambient temperature T
a
[℃]
0.8
0.6
0.4
0.2
1
0.1
-20
0
400 450 500 550 600 650
Wave Length[nm]
Forward current vs.
Forward voltage
40
35
30
25
20
15
10
5
0
0
Radiant Pattern
Angle(deg)
Forward current I
F
[mA]
0
+4
+60
+20
0
-20
-4
0
-6
0
50
-80
-100
+ 80
+1 00
0
100
50
50
1.0 2.0 2.5 3.0 3.5 4.0
Forward voltage V
F
[V]
100
Relative intensity(%)
2/2
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