R325CH06FJ0 datasheet, PDF - EEWORLD Datasheet

R325CH06FJ0: DescriptionSilicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),1.52KA I(T),TO-200AC; CategoryAnalog mixed-signal IC Trigger device; File Size441KB，6 Pages; ManufacturerIXYS

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R325CH06FJ0 Overview

Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,600V V(DRM),1.52KA I(T),TO-200AC

Parameter Name	Attribute value
Maker	IXYS
package instruction	,
Reach Compliance Code	unknown
ECCN code	EAR99
Nominal circuit commutation break time	25 µs
Critical rise rate of minimum off-state voltage	200 V/us
Maximum DC gate trigger current	300 mA
Maximum DC gate trigger voltage	3 V
Maximum holding current	1000 mA
Maximum leakage current	100 mA
On-state non-repetitive peak current	17000 A
Maximum on-state current	1520000 A
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Off-state repetitive peak voltage	600 V
surface mount	NO
Trigger device type	SCR

Shortcut: S0 S1 S2 S3 S4 S5 S6 S7 S8 S9 SA SB SC SD SE SF SG SH SI SJ SK SL SM SN SO SP SQ SR SS ST SU SV SW SX SY SZ T0 T1 T2 T3 T4 T5 T6 T7 T8 T9 TA TB TC TD TE TF TG TH TI TJ TK TL TM TN TO TP TQ TR TS TT TU TV TW TX TY TZ U0 U1 U2 U3 U4 U6 U7 U8 UA UB UC UD UE UF UG UH UI UJ UK UL UM UN UP UQ UR US UT UU UV UW UX UZ V0 V1 V2 V3 V4 V5 V6 V7 V8 V9 VA VB VC VD VE VF VG VH VI VJ VK VL VM VN VO VP VQ VR VS VT VU VV VW VX VY VZ W0 W1 W2 W3 W4 W5 W6 W7 W8 W9 WA WB WC WD WE WF WG WH WI WJ WK WL WM WN WO WP WR WS WT WU WV WW WY X0 X1 X2 X3 X4 X5 X7 X8 X9 XA XB XC XD XE XF XG XH XK XL XM XN XO XP XQ XR XS XT XU XV XW XX XY XZ Y0 Y1 Y2 Y4 Y5 Y6 Y9 YA YB YC YD YE YF YG YH YK YL YM YN YP YQ YR YS YT YX Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z8 ZA ZB ZC ZD ZE ZF ZG ZH ZJ ZL ZM ZN ZP ZR ZS ZT ZU ZV ZW ZX ZY

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