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K5P5781FCM-F055

Description
Memory Circuit, Flash+SRAM, CMOS, PBGA69
Categorystorage    storage   
File Size547KB,37 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

K5P5781FCM-F055 Overview

Memory Circuit, Flash+SRAM, CMOS, PBGA69

K5P5781FCM-F055 Parametric

Parameter NameAttribute value
MakerSAMSUNG
package instructionFBGA, BGA69,10X10,32
Reach Compliance Codecompliant
Maximum access time55 ns
JESD-30 codeS-PBGA-B69
Memory IC TypeMEMORY CIRCUIT
Mixed memory typesFLASH+SRAM
Number of terminals69
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
encapsulated codeFBGA
Encapsulate equivalent codeBGA69,10X10,32
Package shapeSQUARE
Package formGRID ARRAY, FINE PITCH
power supply2.8 V
Certification statusNot Qualified
Maximum standby current0.000001 A
Maximum slew rate0.028 mA
Nominal supply voltage (Vsup)2.8 V
surface mountYES
technologyCMOS
Temperature levelINDUSTRIAL
Terminal formBALL
Terminal pitch0.8 mm
Terminal locationBOTTOM
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