EEWORLDEEWORLDEEWORLD

Part Number

Search

JAN1N756A

Description
Zener Diode, 8.2V V(Z), 5%, 0.4W,
CategoryDiscrete semiconductor    diode   
File Size70KB,19 Pages
ManufacturerBkc Semiconductors Inc.
Download Datasheet Parametric View All

JAN1N756A Overview

Zener Diode, 8.2V V(Z), 5%, 0.4W,

JAN1N756A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerBkc Semiconductors Inc.
Reach Compliance Codeunknown
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance5 Ω
JESD-609 codee0
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation0.4 W
Nominal reference voltage8.2 V
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Maximum voltage tolerance5%
Working test current20 mA
The documentation and process conversion
measures necessary to comply with this
revision shall be completed by 08 October 1999.
INCH-POUND
MIL-PRF-19500/127N
09 July 1999
SUPERSEDING
MIL-S-19500/127M
14 March 1994
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICES, DIODE, SILICON, VOLTAGE REGULATOR,
TYPES 1N4370A-1 THROUGH 1N4372A-1, AND 1N746A-1 THROUGH 1N759A-1, 1N4370AUR-1 THROUGH 1N4372AUR-1 AND
1N746AUR-1 THROUGH 1N759AUR-1, 1N4370C-1 THROUGH 1N4372C-1, AND 1N746C-1 THROUGH 1N759C-1, 1N4370CUR-1
THROUGH 1N4372CUR-1 AND 1N746CUR-1 THROUGH 1N759CUR-1, 1N4370D-1, THROUGH 1N4372D-1, AND 1N746D-1
THROUGH 1N759D-1, 1N4370DUR-1 THROUGH 1N4372DUR-1 AND 1N746DUR-1 THROUGH 1N759DUR-1,
JAN, JANTX, JANTXV, JANHC, AND JANKC
JANS level (see 6.3).
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 500 milliwatt, silicon, voltage regulator diodes with voltage
tolerances of 5, 2, and 1 percent. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500.
Two level of product assurance is provided for die.
1.2 Physical dimensions. See 3.3 and figure 1 (similar to DO-35) and figure 2 (similar to DO-213AA), and figures 3 and 4 for die.
1.3 Maximum ratings. Maximum ratings are as shown in column 4 table II herein and as follows:
P
T
= 500 mW, (DO-35) at T
L
= +50
°
C, L = .375 inch (9.53 mm); both ends of case or diode body to heat sink at
L = .375 inch (9.53 mm). Derate I
Z
to 0.0 mA dc at +175
°
C.
-65
°
C
T
J
+175
°
C; -65
°
C
T
STG
+175
°
C
P
T
= 500 mW, (DO-213AA) at T
EC
= +125
°
C, derate to 0 at +175
°
C.
1.4 Primary electrical characteristics. Primary electrical characteristics are as shown in columns 2, 9, 12, and 14 table II herein and as
follows:
2.4 V dc
V
Z
12 v dc
1N4370A-1 through 1N4372A-1 and 1N746A-1 through 1N759A-1 are
±
5 percent voltage tolerance.
1N4370C-1 through 1N4372C-1 and 1N746C-1 through 1N759C-1 are
±
2 percent voltage tolerance.
1N4370D-1 through 1N4372D-1 and 1N746D-1 through 1N759D-1 are
±
1 percent voltage tolerance.
Thermal resistance:
R
θ
JL
= 250
°
C/W maximum at L = .375 inch (9.53 mm) (D0-35).
R
θ
JEC
= 100
°
C/W maximum. Junction to end-caps (D0-213AA).
Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document
should be addressed to: Commander, Defense Supply Center Columbus, ATTN: DSCC-VAC, 3990 East Broad St., Columbus, OH
43216-5000, by using the addressed Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this
document or by letter.
AMSC N/A
DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited.
FSC 5961
[GD32L233C-START Review] 13. CAU encryption algorithm DES/TDES
For previous posts, please refer to:【GD32L233C-START Review】1. Unboxing [GD32L233C-START Review] 2. Create a new project step by step [GD32L233C-START Evaluation] 3. Porting FreeRTOS to GD32L233 【GD32...
hehung GD32 MCU
Wireless Sensor Network Overview
1. History of wireless sensor network developmentThe first stage: the earliest can be traced back to the Vietnam War when traditional sensor systems were used The second stage: between the 1980s and 1...
Jacktang Wireless Connectivity
[Silicon Labs BG22-EK4108A Bluetooth Development Evaluation] 3. Lighting Experiment
[i=s]This post was last edited by webber310 on 2022-1-7 19:58[/i]3. Lighting Experiment In the previous article, we introduced the hardware of BG22-EK4108A and the installation of the development envi...
webber310 Development Kits Review Area
CC1310 Two-wire Serial Bootloader Solution
CC1310 is a Sub-1G-capable SOC in TI Simplelink MCU series. In response to the application requirements of many customers who need to upgrade firmware via serial port, CC1310 has a built-in ROM-based ...
Jacktang RF/Wirelessly
Huawei mobile phone case fill light
Huawei MATE 40 Ring Flash Protective Case Solution_Principle Analysis and Original Disassembly Comparison Recently, Huawei launched a very unique protective case. The highlight of this protective case...
小瑞瑞 PCB Design
Filter applications for different scenarios - harmonics
Interpreting the Direct RF Sampling Architecture and Its Advantages For many years, digital transceivers have been used in many types of applications, including terrestrial cellular networks, satellit...
btty038 RF/Wirelessly

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号