GBJ6005 datasheet, PDF - EEWORLD Datasheet

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GBJ6005: DescriptionBridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon,; CategoryDiscrete semiconductor diode; File Size64KB，4 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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GBJ6005 Overview

Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon,

GBJ6005 Parametric

Parameter Name	Attribute value
Maker	Vishay
package instruction	R-PSFM-T4
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	UL RECOGNIZED
Shell connection	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4
Maximum non-repetitive peak forward current	170 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	6 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	50 V
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE

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GBJ6005–GBJ610

Vishay Lite–On Power Semiconducter

6.0A Glass Passivated Bridge Rectifier

Features

Glass passivated die construction

High case dielectric strength of 1500V

RMS

Low reverse leakage current

Surge overload rating to 170A peak

Ideal for printed circuit board applications

Plastic material – UL Recognition flammability

classification 94V–0

14 401

ULRecognized file #E95060

Absolute Maximum Ratings

= 25

Parameter

Repetitive peak reverse voltage

=Working peak reverse voltage

=DC Bl ki voltage

DC Blocking lt

Test Conditions

Type

GBJ6005

GBJ601

GBJ602

GBJ604

GBJ606

GBJ608

GBJ610

Symbol

RRM

RWM

Value

100

200

400

600

800

1000

170

–65...+150

Unit

Peak forward surge current

Average forward current

=110

Junction and storage temperature range

FSM

FAV

stg

Electrical Characteristics

= 25

Parameter

Forward voltage

Reverse current

t Rating for fusing

Diode capacitance

Thermal resistance

junction to case

Test Conditions

=3A

=25

=125

=4V, f=1MHz

mounted on

75x75x1.6mm aluminum plate

Type

Symbol

thJC

Min

Typ

Max

500

120

Unit

K/W

6.7

Rev. A2, 24-Jun-98

1 (4)

GBJ6005–GBJ610

Vishay Lite–On Power Semiconductor

Ozone Depleting Substances Policy Statement

It is the policy of

Vishay Semiconductor GmbH

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems with respect to their impact on the health and safety of our employees and the public, as well as

their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known

as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH

has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH

can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized

application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out

of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423

4 (4)

Rev. A2, 24-Jun-98

GBJ6005 Related Products

	GBJ6005	GBJ606	GBJ610	GBJ601	GBJ608	GBJ604	GBJ602
Description	Bridge Rectifier Diode, 1 Phase, 6A, 50V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 600V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 1000V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 100V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 800V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 400V V(RRM), Silicon,	Bridge Rectifier Diode, 1 Phase, 6A, 200V V(RRM), Silicon,
package instruction	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED	UL RECOGNIZED
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
JESD-30 code	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4	R-PSFM-T4
Maximum non-repetitive peak forward current	170 A	170 A	170 A	170 A	170 A	170 A	170 A
Number of components	4	4	4	4	4	4	4
Phase	1	1	1	1	1	1	1
Number of terminals	4	4	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C	-65 °C
Maximum output current	6 A	6 A	6 A	6 A	6 A	6 A	6 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	50 V	600 V	1000 V	100 V	800 V	400 V	200 V
surface mount	NO	NO	NO	NO	NO	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Maker	Vishay	Vishay	-	Vishay	Vishay	Vishay	Vishay

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