IRFM250 datasheet, PDF - EEWORLD Datasheet

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IRFM250: DescriptionPower Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3; CategoryDiscrete semiconductor The transistor; File Size93KB，1 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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IRFM250 Overview

Power Field-Effect Transistor, 28A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3

IRFM250 Parametric

Parameter Name	Attribute value
Maker	TEMIC
package instruction	HERMETIC SEALED PACKAGE-3
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (ID)	28 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-254AA
JESD-30 code	S-MSFM-P3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	SQUARE
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	SINGLE
Transistor component materials	SILICON

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